Untitled
Abstract: No abstract text available
Text: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,
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bbS3T31
00113bl
BYV33F
T-03-19
OT-186
bb53T31
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Untitled
Abstract: No abstract text available
Text: _ _ _ I N AM PR PHXLIPS/DISCRETE DbE D PHS1101JSERIES IS bbS3T31 OOllbfl? 7 H T - <93 ~ /S' *1 b f t 15 EPITAXIAL AVALANCHE RECTIFIERS The P H S1 101 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed
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PHS1101JSERIES
bbS3T31
bhS3131
7Z88041
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Untitled
Abstract: No abstract text available
Text: JLL bbS3T31 D0114D7 fl OLE D N AUER PH ILI PS/ DIS CRET E BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical
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bbS3T31
D0114D7
BYV43F
OT-186
bhS3T31
M1246
tbS3T31
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fl7D D bbS3T31 COOTS47 5 11 . T -01-01 LID RELIABILITY DATA | UNIT HOURS #O F FAILURES FAILURE RATE* 1483 1,475,840 2 .21 1520 1,519,000 .06 TEMPERATURE # F UNITS Operating Life T ,= 150°C Storage Life Ta = 150°C ' test • . l| §
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bbS3T31
COOTS47
Failures/1000
MIL-STD-690B.
LTA101A
LTA320
LTA324
LTA741
LTA741C
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bc160
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 0027510 70b IAPX BC160 BC161 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 BC161
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bbS3T31
BC160
BC161
BC140
BC141.
BC160-10
BC161-10
BC160-16
bc160
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philips blx14
Abstract: BLX14
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz
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bbS3T31
BLX14
philips blx14
BLX14
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0D3237T Philips Semiconductors ^ p^ Product specification CATV amplifier module — BGY89 ^ — N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common
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bbS3T31
0D3237T
BGY89
PINNING-SOT115C
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear
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bbS3T31
BLX13U
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE4M5Q 73T » A P X Philips Semiconductors NPN general purpose transistor BC817W; BC818W AMER PHILIPS/DISCRETE FEATURES Product specification b7E D PIN CONFIGURATION • High current CM a; • S -m in i package. 1 D ESCRIPTION NPN transistor in a plastic SOT323
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bbS3T31
BC817W;
BC818W
OT323
M8C87
M8B012
BC817-16W
BC817-25W
BC817-40W
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D bbS3T31 □ D2'132b m b I IAPX BLW34 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation
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bbS3T31
BLW34
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,
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bbS3T31
1000R
bbSBT31
BTW63
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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bbS3T31
DD32EQ5
X3A-BFQ34
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
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Untitled
Abstract: No abstract text available
Text: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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bbS3T31
RXB12350Y
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
K438-800A/B
BUK438
-800A
-800B
BUK438-800A/B
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BFY90 PHILIPS
Abstract: No abstract text available
Text: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole
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bbS3T31
X3A-BFW92
BFW92
BFY90
BFS17
BFY90 PHILIPS
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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bbS3T31
QDE473T
BF991
OT143
OT103
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ObE D bbS3T31 QD1S013 7 MAINTENANCE TYPE LV3742E24R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier from 3,7 to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide
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bbS3T31
QD1S013
LV3742E24R
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Untitled
Abstract: No abstract text available
Text: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.
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bbS3T31
D01S1S3
PZB16035U
bb53T31
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BYT230PIV600
Abstract: No abstract text available
Text: 2SE D • bbS3T31 Q0255D1 0 ■ BYT230PIV600 to 800 N AUER PHILIPS/DISCRETE 7 =03-19 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery characterisitc.
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bbS3T31
Q0255D1
BYT230PIV600
BYT230PIV--6
T-03-19
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2508DF
Abstract: bu2508df
Text: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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bbS3T31
BU2508DF
002fl3b2
OT199;
2508DF
bu2508df
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Untitled
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A
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bbS3T31
DD27b3b
BCY70
BCY71
BCY70
BCY71
BCY72
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d 1556 transistor
Abstract: No abstract text available
Text: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching
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bbS3T31
0025fc
BSS64
002Sbll
d 1556 transistor
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philips 4859
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency
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bbS3T31
D05SB11
BFR505
BFR505
philips 4859
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PXTA14
Abstract: PMBTA64 BST60 PMBTA14
Text: N AflER PHILIPS/DISCRETE 5SE ]> • T-27~{?| bbS3T31 QQlt,E3T S ■ Surface Mount Devices DARLINGTON TRANSISTORS RATINGS TYPE PACKAGE hFE n V cE sat VCEO V VcB O V ic mA m inim ax. a t Iq /V c E mA/V V max. a tlc /le mA/mA typ MHZ PINOUT SEE SECTION VI N PN
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bbS3T31
PMBTA13
PZTA13
PMBTA14
PXTA14
PZTA14
OT-23
T-223
OT-89
PXTA14
PMBTA64
BST60
PMBTA14
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