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    BUL54BFI Search Results

    BUL54BFI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUL54BFI Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


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    PDF BUL54BFI 100mA

    BUL54BFI

    Abstract: No abstract text available
    Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


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    PDF BUL54BFI 100mA BUL54BFI

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    BUL54AR

    Abstract: BUL54 20MHZ npn 500v BUL54A-T257
    Text: Search Results Part number search for devices beginning "BUL54" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL54A NPN TO220 500V 4A 12 - 5/0.5 20MHz


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    PDF BUL54" BUL54A BUL54AFI BUL54AR BUL54ASMD BUL54A-T126R BUL54A-T257 BUL54A-TO126 BUL54A-TO5 BUL54B BUL54 20MHZ npn 500v

    Untitled

    Abstract: No abstract text available
    Text: INI INI SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t* - * \ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


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    PDF BUL54BFI 100mA

    T0251

    Abstract: T0-251
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A


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    PDF BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251

    mje13009 equivalent

    Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
    Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal


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    PDF BUL74A MJE13009 BUL36I T022SGO T0220 BUV46 MJE13004 BUL53A mje13009 equivalent MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent