Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AS4LC1M16S0 Search Results

    SF Impression Pixel

    AS4LC1M16S0 Price and Stock

    Alliance Memory Inc AS4LC1M16S010TC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics AS4LC1M16S010TC 13
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    AS4LC1M16S0 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AS4LC1M16S0 Alliance Semiconductor 3.3V Synchronous, 16M, 1Mx16 Original PDF
    AS4LC1M16S0-10TC Alliance Semiconductor 3.3V 1M x 16 CMOS synchronous DRAM Original PDF
    AS4LC1M16S0-10TC Alliance Semiconductor 16 Megabit CMOS Synchronous DRAM Scan PDF
    AS4LC1M16S0-12TC Alliance Semiconductor 16 Megabit CMOS Synchronous DRAM Scan PDF
    AS4LC1M16S0-7TC Alliance Semiconductor 3.3V 1M x 16 CMOS synchronous DRAM Original PDF
    AS4LC1M16S0-8TC Alliance Semiconductor 3.3V 1M x 16 CMOS synchronous DRAM Original PDF

    AS4LC1M16S0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS4LC1M16S1

    Abstract: AS4LC1M16S0 A102BA
    Text: May 2001 AS4LC2M8S1 AS4LC2M8S0 AS4LC1M16S1 AS4LC1M16S0 Preliminary 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16)


    Original     		PDF AS4LC1M16S1 AS4LC1M16S0 44-pin 50-pin AS4LC1M16S1 AS4LC1M16S0 A102BA

    Untitled

    Abstract: No abstract text available
    Text: March 2001 AS4LC2M8S1 AS4LC1M16S1 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address • All signals referenced to positive edge of clock, fully


    Original     		PDF AS4LC1M16S1 PC100 44-pin

    AS4LC1M16S0

    Abstract: AS4LC1M16S1
    Text: Advance information AS4LC2M8S1 AS4LC1M16S1 3.3V 2M x 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks 2M × 8 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address


    Original     		PDF AS4LC1M16S1 44-pin 50-pin 44-pin AS4LC2M8S1-10TC AS4LC2M8S1-12TC 50-pin AS4LC1M16S1-8TC AS4LC1M16S1-10TC AS4LC1M16S1-12TC AS4LC1M16S0 AS4LC1M16S1

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFH#LQIRUPDWLRQ $67/&50;63 $67/&404963 6169#50ð;240ð49#&026#V\QFKURQRXV#'5$0 HDWXUHV • Organization: 1,048,576 words x 8 bits × 2 banks 2M×8) 524,288 words × 16 bits × 2 banks (1M×16) • All signals referenced to positive edge of clock


    Original     		PDF AS4LC2M8S0-10TC AS4LC2M8S0-12TC 50-pin AS4LC1M16S0-8TC AS4LC1M16S0-10TC AS4LC1M16S0-12TC

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    SDRAM

    Abstract: 2m8524 dbb4
    Text: $GYDQFHLQIRUPDWLRQ $6/&06 $6/&06 90ð0ð&026V\QFKURQRXV'5$0 HDWXUHV • Organization: 1,048,576 words x 8 bits × 2 banks 2M×8) 524,288 words × 16 bits × 2 banks (1M×16) • All signals referenced to positive edge of clock


    Original     		PDF 26V\QFKURQRXV 44-pin 50-pin AS4LC1M16S0-8TC AS4LC2M8S0-10TC AS4LC1M16S0-10TC AS4LC2M8S0-12TC AS4LC1M16S0-12TC SDRAM 2m8524 dbb4

    1MX16

    Abstract: AS4LC1M16S0 4lc2m8
    Text: AS4LC2M8S0 AS4LC1M16S0 H igh Perform ance 2MX8/1MX16 CMOS DRAM 1 6 M egabit CM O S synchronous DRAM Advance information Features • Organization: 1,048 ,5 7 6 w ords x 8 bits x 2 banks 2M x8 52 4 ,2 8 8 w ords x 16 bits x 2 banks (lM x 16) • All signals referenced to positive edge o f dock


    OCR Scan     		PDF 2MX8/1MX16 AS4LC1M16S0 AS4LC2M8S0-10TC 2M8S0-12TC 50-pin AS4LC1M16S0-10TC LCIM16S0-12TC 0001b27 G1998 1MX16 AS4LC1M16S0 4lc2m8

    Untitled

    Abstract: No abstract text available
    Text: À U ujüP M 1 \ 1 < » H Ili h! î Hc Li V-s 11 ( ; is i h - l i t f S !I ; H i l! i vj Advance information Features •A utom atic an d direct precharge 1 Burst read, single w rite • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks (2M x8) 3 2 4 ,2 8 8 w ords x 16 bits x 2 banks


    OCR Scan     		PDF 44-pin 50-pin AS4LC2M8S0-12TC AS4LC1M16S0-12TC AS4LC1M16SO-10TC

    Untitled

    Abstract: No abstract text available
    Text: H ish Performance' •■ AS4LC 1 M I 6 S 0 A 1M X I 6 C M O S D RA M I M x 16 S y n c hr on o us D I M M Advance information Features • Organization: 524,288 w ords x 16 bits x 2 banks * Can assert random column address in every cycle • All signals referenced to positive edge o f clock


    OCR Scan     		PDF 44-pin AS4LC1M16S0 Q00CHb2

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function


    OCR Scan     		PDF 44-pin 50-pin 44-pin 50-pin AS4LC1M16S0-8TC ASHX2M890-10TC AStLClM1690-10TC AS4LC2M8S0-12TC AS4IC1M16S0-12TC T90PII400

    AS4C256K16F0-60JC

    Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
    Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization


    OCR Scan     		PDF AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		PDF AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


    OCR Scan     		PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM

    AS4C2M8

    Abstract: No abstract text available
    Text: A Till ! ni T .i h I e ( *I i i m i e il i s L (h i i t 'l l i \ Page number Product guide. 3 Cross


    OCR Scan     		PDF AS7C164 AS7C256L AS7C52 AS7C5256L AS7C259 AS7C259L AS7C512L AS7C35 AS7C3512L AS7C1024 AS4C2M8

    UAA 1006

    Abstract: AS4LC1M16SO AS4LC1M16S0 1024x512x8 DTA 1006
    Text: Advance informatio AS4LC 2M8S0 AS4LC1 M16S0 3.3V 2 M x 8 /lM x 1 6 CMOS synchronous DRAM Features A utom atic and direct precharge B urst read, single w rite Can assert ra n d o m co lu m n address in every cycle LVTTL co m patible V O 3 .3 Y p o w e r supply


    OCR Scan     		PDF M16S0 t90pii 44-pin AS4LC2M890- AS4LC2M8S0-12TC 50-pin AS4LC1M16S0-8TC AS4LC1M16SQ-10TC AS4IC1M16S0-12TC 6ID11-3O0Q0-Ã UAA 1006 AS4LC1M16SO AS4LC1M16S0 1024x512x8 DTA 1006

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function


    OCR Scan     		PDF 44-pin 50-pin 50-pin AS4LC1M16S0-8TC ASHX2M890-10TC AStLClM1690-10TC AS4LC2M8S0-12TC AS4IC1M16S0-12TC T90PII400