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    SRAM Search Results

    SRAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    BQ2204APN Texas Instruments SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-PDIP 0 to 70 Visit Texas Instruments Buy
    BQ2204ASN Texas Instruments SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70 Visit Texas Instruments Buy
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    SRAM Price and Stock

    Vishay Sfernice ACCSRAMKWIRESOB069

    ACCS RAMK WIRESOE4 069 B005
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACCSRAMKWIRESOB069 Box 20 1
    • 1 $48.48
    • 10 $40.723
    • 100 $32.724
    • 1000 $31.512
    • 10000 $31.512
    		Buy Now

    AirBorn Inc VSRAM-04-30-50-04-G

    HIGH SPEED / HIGH DENSITY CONNEC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VSRAM-04-30-50-04-G Tray 10 1
    • 1 $319.82
    • 10 $296.363
    • 100 $296.363
    • 1000 $296.363
    • 10000 $296.363
    		Buy Now

    Lantronix Inc SRA-MAP-01

    TOOLS, EQUIP, HRDWR, ENCL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SRA-MAP-01 Bulk 1
    • 1 $1049
    • 10 $1049
    • 100 $1049
    • 1000 $1049
    • 10000 $1049
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    Mouser Electronics SRA-MAP-01
    • 1 $1049
    • 10 $1049
    • 100 $1049
    • 1000 $1049
    • 10000 $1049
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    NXP Semiconductors LFVCALSRAM2

    16 BIT 2MB VERTICAL CALIBRATION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LFVCALSRAM2 Bulk 1
    • 1 $379.65
    • 10 $379.65
    • 100 $379.65
    • 1000 $379.65
    • 10000 $379.65
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    Avnet Americas LFVCALSRAM2 Box 1
    • 1 $382.8825
    • 10 $374.85
    • 100 $350.7525
    • 1000 $332.01
    • 10000 $332.01
    		Buy Now

    Lantronix Inc SRA-MAP-01-NA

    TOOLS, EQUIP, HRDWR, ENCL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SRA-MAP-01-NA Bulk 1
    • 1 $1049
    • 10 $1049
    • 100 $1049
    • 1000 $1049
    • 10000 $1049
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    Mouser Electronics SRA-MAP-01-NA
    • 1 $1049
    • 10 $1049
    • 100 $1049
    • 1000 $1049
    • 10000 $1049
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    Find more SRAM price and stock on Findchips.com

    SRAM Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SRAM20100LCT10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LCT85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM4 Allied Signal Aerospace Company x1 SRAM Scan PDF

    SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


    Original     		PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    lpc1769

    Abstract: ARM LPC1769 instruction set LPC1768 bootloader lpc1768 gpio lpc1768fbd LPC236 LPC17XX LPC1766 NXP bootloader LPC1768 spi Crystal oscillator 12 MHz
    Text: LPC1769/68/67/66/65/64/63 32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN Rev. 9 — 10 August 2012 Product data sheet 1. General description The LPC1769/68/67/66/65/64/63 are ARM Cortex-M3 based microcontrollers for


    Original     		PDF LPC1769/68/67/66/65/64/63 32-bit LPC1769/68/67/66/65/64/63 LPC1768/67/66/65/64/63 LPC1769 ARM LPC1769 instruction set LPC1768 bootloader lpc1768 gpio lpc1768fbd LPC236 LPC17XX LPC1766 NXP bootloader LPC1768 spi Crystal oscillator 12 MHz

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    TEXAS INSTRUMENTS, Mold Compound, CSP

    Abstract: No abstract text available
    Text: SM320C6202ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SGUS044–JULY 2003 D Controlled Baseline D D D D D D D D D D 3M-Bit On-Chip SRAM – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –40°C to 105°C Enhanced Diminishing Manufacturing


    Original     		PDF SM320C6202EP SGUS044 SM320C62x 200-MHz 32-Bit 32-/40-Bit) 16-Bit TEXAS INSTRUMENTS, Mold Compound, CSP

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs


    Original     		PDF bq2204A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


    OCR Scan     		PDF TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan     		PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30

    UM62*512

    Abstract: No abstract text available
    Text: UM62L512 Series 6 4 K X 8 LOW VOLTAGE CMOS SRAM PRELIMINARY Features • Single + 3.3V power supply ■ Access times: 70/100 ns max. * Current: Low power version: Operating: 40mA ■ Directly TTL compatible: All inputs and outputs ■ Comm on I/O using three-state output


    OCR Scan     		PDF UM62L512 32-pin 288bit UM62L512V-70L UM62L512V-70LL UM62L512VR-70L UM62L512VR-70LL UM62L512-10L UM62*512

    Untitled

    Abstract: No abstract text available
    Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 SRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­


    OCR Scan     		PDF bq4850Y 512Kx8 304-bit 32-pin

    UM61256FK-15

    Abstract: um61256fs 15 UM61256FS-15 um61256f um61256fk15 UM61256FK UM61256FM-25 um61256 UM61256FK-12 um61256fs
    Text: UM61256F Seríes 32K X a High Speed CMOS SRAM Features • * ■ ■ ■ Single +5V power supply ■ Access times: 12 /15/2 5 ns max. ■ Current: Operating: 150mA (max.) Standby: 12mA (max.) ■ Full static operation, no clock o r refreshing required Directly TTL compatible: All inputs and outputs


    OCR Scan     		PDF UM61256F 150mA 28-pin 144-bit UM61256FK-12 UM61256FS-12 UM61256FK-15 UM61256FS-15 um61256fs 15 um61256fk15 UM61256FK UM61256FM-25 um61256 um61256fs

    um611864

    Abstract: No abstract text available
    Text: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable


    OCR Scan     		PDF UM611864 275mA 52-pin UM611864 UM611864-11

    UM614256

    Abstract: HC 3102
    Text: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package


    OCR Scan     		PDF UM614256 150mA 28-pin 576-bit UM614256S-15 UM614256S-20 28LSOJ HC 3102

    UM6114

    Abstract: SRAM 6114 UM 6114 611-4
    Text: 1IM Fi 7 =r : UM 6114 ^ IK X 4 CM OS SRAM Features • S in g le +5 v o lt p o w er su p p ly D ir e c t ly T T L co m p a tib le : A ll in p u ts and o u tp u ts ■ A c ce ss tim e : 9 0 ns m a x . C o m m o n I/O using three-state o u tp u t D ata re te n tio n vo ltag e: 2 V (m in .)


    OCR Scan     		PDF

    UM621024B

    Abstract: UM621024 um621024bm-70l
    Text: UM621024B Seríes 128K X 8 CMOS SRAM Features • Single +5V power supply ■ Access times: 55/70 ns max. ■ Current: Low power version: Operating: 70mA Standby: 100(iA Very low power version: Operating: 70mA Standby: 25 (¿A * Full static operation, no clock or refreshing


    OCR Scan     		PDF UM621024B 32-pin 576bit UM621024BV-70L UM621024BV-70LL UM621024BVR-70L UM621024BVR-70LL UM621024B-10L UM621024 um621024bm-70l

    Untitled

    Abstract: No abstract text available
    Text: o U N IT R O D E _ bq2201 SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3-volt battery-backup applica­ tions The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard


    OCR Scan     		PDF bq2201 bq2201 TD220103 16-pin

    UM61M512K-15

    Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
    Text: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible


    OCR Scan     		PDF UM61M512 160mA 32-pin 288bit UM61M512K-15 UM61M512K-20 UM61M512K15 um61M512K UM61M512-20 um61m UM61M51

    Untitled

    Abstract: No abstract text available
    Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles


    OCR Scan     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx

    TC551001BPL-10

    Abstract: TC551001BPL-7
    Text: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as


    OCR Scan     		PDF TC551001 BTRL-10 072-WORD TC551001BPL/BFL/BFTL/BTRL 576-bit TSOP32-P-0820) TC551001BPL-- TC551001BPL-10 TC551001BPL-7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to


    OCR Scan     		PDF TC55V1403J/FT-15 304-WORD 576-WORD TC55V1403J/FT 304-bit SOJ32-P-400-1 PII32-P-400-1 35MAX

    UM61L3232AF-7

    Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
    Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write


    OCR Scan     		PDF UM61L3232A 100-pin 10jiA. UM61L3232AF-5 UM61L3232AE-5 UM61L3232AF-6 UM61L3232AE-6 UM61L3232AF-7 UM61L3232AE-7 um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af

    alarm clock IC

    Abstract: bq4842y
    Text: bq4842Y RTC Module with 128Kx8 SRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non­ volatile 1,048,576-bit SRAM organ­ ized as 131,072 words by 8 bits with


    OCR Scan     		PDF bq4842Y 128Kx8 10-year 576-bit-up alarm clock IC

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


    OCR Scan     		PDF L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4