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    q406 transistor

    Abstract: q406 equivalent q406 AS5SP256K36DQ AS5LC1008DJ AS5LC512K8 TSOP2-66 transistor q406 AS5SP512K36DQC-30/XT PC2100
    Text: “CO TS” PR ODUCT F AMIL Y “COTS” PRODUCT FAMIL AMILY Austin Semiconductor, Inc., a leading solutions provider for the HighReliability Industries since 1988, is now your leading source for Commercial Off The Shelf products. Austin Semi, with its very broad product offering of


    Original     		PDF OP-32 TSOP-32 TSOP-48 q406 transistor q406 equivalent q406 AS5SP256K36DQ AS5LC1008DJ AS5LC512K8 TSOP2-66 transistor q406 AS5SP512K36DQC-30/XT PC2100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29LV008 A 3V 1 M x 8 C M O S Flash EEPROM Features • Organization: 1M x 8 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - Boot code sector architecture— T top or B (bottom) - &ase any combination o f sectors or full chip


    OCR Scan     		PDF AS29LV008 64Kbyte 28-pin 32-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29LV008 II 3V 1Mx 8 CMOS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d fifte e n 64K b y te secto rs - B oot c o d e se c to r a rc h ite c tu re — T top o r B (b o tto m )


    OCR Scan     		PDF AS29LV008 a100T 008-100T 008-120TC 008-120T 008-150TC 008-150T AS29LV008-80SC AS29Lv008-80SI S29LV

    29LV008

    Abstract: 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI
    Text: H ig h p e rfo rm a n c e 8 M egabit 3V CMOS Flash EEPROM AS29LV008 II A 8 Megabit CMOS FJüsh EPRO M Advance information Features • Organization: 1M x 8 • Sector architecture • Low pow er consumption - 10 m A typical re a d c u rre n t - 3 0 m A typical p ro g ra m c u rre n t


    OCR Scan     		PDF AS29LV008 10x20 9LV008-80TC AS29LV008-80TI AS29LV008-100TC AS29LV008-1OOTI AS29LVD08-120TC 9LV008-120TI AS29LV008- AS29LV008-1SOTI 29LV008 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI

    Untitled

    Abstract: No abstract text available
    Text: H igh perfo rm an ce 8 M egabit 3V CMOS Flash EEPROM . AS29LV008 II A 8 M eg ab it C M O S F la sh E P R O M Advance inform ation Features • Organization: 1M x 8 • Sector architecture - O ne 16K; tw o 8 • L o w p o w e r c o n s u m p t io n - 10 m A typical re a d c u rre n t


    OCR Scan     		PDF AS29LV008 programmiAS29LV008-100TC AS29LV008-100TI AS29LV008-120TC AS29LV008-120TI AS29LV008-150TC AS29LV008-1S0TI AS29LV008-80SC AS29LV 008-100SC

    29LV008

    Abstract: 29ly008120 A529 AS29 29LV008-100
    Text: Preliminary information •■ AS29LV008 1 3V 1M x 8 CM OS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector a rc h ite c tu re - O n e 16K ; t w o 8 • L o w p o w e r c o n s u m p tio n - 10 m A ty p ic a l r e a d c u r r e n t K; o n e 3 2 K ; a n d f ifte e n 6 4 K b y te s e c to rs


    OCR Scan     		PDF AS29LV008 AS29LV008-80TC 10x20 40-ptn AS29Lv008-80TI AS29LV008-AS29LV008- -100TC 120TC 120TI 29LV008 29ly008120 A529 AS29 29LV008-100

    AOCM A13

    Abstract: de s5h 556 jrc X51L
    Text: Advance information Features • O rganization: 1M x 8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip • Single 2 .7 -3 .6 V p o w e r su p p ly for re a d /w r ite op eration s


    OCR Scan     		PDF AS29LV 008-100TC 008-100T S29LV 008-100SC 008-100SI -120TC 008-120T1 AOCM A13 de s5h 556 jrc X51L

    AS4C256K16F0-60JC

    Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
    Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization


    OCR Scan     		PDF AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		PDF AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


    OCR Scan     		PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM