Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh
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IBM0165165B
IBM0165165P
104ns
526mW
165ma
175ma
135ma
145ma;
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Untitled
Abstract: No abstract text available
Text: H ig h P e r fo r m a n c e 2 M X 8 /1 M X 1 6 CMOS DRAM A S4L C 2M 8S0 A S4L C 1M 16S0 16 M egabit C M O S synchronous DR A M Advance information Features 1 Automatic and direct precharge • Organization: 1,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks 2M x8
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50-pin
44-pin
AS4LC2M8S0-10TC
AS4LC2M8S0-12TC
AS4LC1M16S0-10TC
AS4LCIM16S0-12TC
0001b27
AS4LC1M16S0
TSOPII400
II-30000-A.
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