Untitled
Abstract: No abstract text available
Text: À U ujüP M 1 \ 1 < » H Ili h! î Hc Li V-s 11 ( ; is i h - l i t f S !I ; H i l! i vj Advance information Features •A utom atic an d direct precharge 1 Burst read, single w rite • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks (2M x8) 3 2 4 ,2 8 8 w ords x 16 bits x 2 banks
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44-pin
50-pin
AS4LC2M8S0-12TC
AS4LC1M16S0-12TC
AS4LC1M16SO-10TC
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Untitled
Abstract: No abstract text available
Text: H i» h P e r f o r m ,m i e _ A S 4 ' Z M 8 lil | | \ S4 I ( /.MH I'll A ZMxK ( M< )S I ) K \ M 'M X « CM O S I1DO I ) li A VI Prelim inary inform ation Features • Organization: 2,097,1 52 w ords x 8 bits • High speed • Read-modify-write • TTL-compatible, three-state I/O
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8E0-60JC
8E0-70JC
28-piu
28-pm
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c2m6b
Abstract: 4lc2m8
Text: 4LC2M8B1 L 2 MEG X 8 DRAM fU IIC R O N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry -sta n d a rd x8 p in o u ts, tim in g , • • OPTIONS 28-Pin 300 mil SOJ (DA-3)
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048-cy
28-Pin
MT4LC2M88KL.
c2m6b
4lc2m8
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance 2M x8 CMOS DRAM II ; AS4C2M8E0 AS4T.C2M8E0 II 2M X 8 CMOS EDO DRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its • R e a d - m o d ify -w r ite • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s ta te 1 / O
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AS4LC2M8E0-60JC
AS4-C2M8E0-60JC
AS4LC2M8E0-70
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1MX16
Abstract: AS4LC1M16S0 4lc2m8
Text: 4LC2M8S0 AS4LC1M16S0 H igh Perform ance 2MX8/1MX16 CMOS DRAM 1 6 M egabit CM O S synchronous DRAM Advance information Features • Organization: 1,048 ,5 7 6 w ords x 8 bits x 2 banks 2M x8 52 4 ,2 8 8 w ords x 16 bits x 2 banks (lM x 16) • All signals referenced to positive edge o f dock
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2MX8/1MX16
AS4LC1M16S0
AS4LC2M8S0-10TC
2M8S0-12TC
50-pin
AS4LC1M16S0-10TC
LCIM16S0-12TC
0001b27
G1998
1MX16
AS4LC1M16S0
4lc2m8
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4lc2m8
Abstract: No abstract text available
Text: 4LC2M8E7 S 2 MEG X 8 DRAM ÍMICnON :fl TtCHWXOGV.WC. 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x8 pinout, timing functions and packages • High-performance C M O S silicon-gale process • Single +3.3V ±0.3V pow er supply
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150mV'
048-cycle
28-Pin
T1995
Ct995.
4lc2m8
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Untitled
Abstract: No abstract text available
Text: H ig h P e r fo r m a n c e 2 M X 8 /1 M X 1 6 CMOS DRAM A S4L C 2M 8S0 A S4L C 1M 16S0 16 M egabit C M O S synchronous DR A M Advance information Features 1 Automatic and direct precharge • Organization: 1,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks 2M x8
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50-pin
44-pin
AS4LC2M8S0-10TC
AS4LC2M8S0-12TC
AS4LC1M16S0-10TC
AS4LCIM16S0-12TC
0001b27
AS4LC1M16S0
TSOPII400
II-30000-A.
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Untitled
Abstract: No abstract text available
Text: H i»h P e r f o r m a n t e ZMxH CMOS DRAM AS4I.C2M8S0 A 2Mx<S C M O S .S niliromnis l)R/\M Advance information Features • • • • Organization: 1,048,576 w ords x 8 bits x 2 banks All signals referenced to positive edge o f clock Dual internal banks controlled by BA)
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Untitled
Abstract: No abstract text available
Text: 4LC2M8B1 S 2 MEG X 8 DRAM MICRON I TECHNOLOGY. INC DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x8 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process
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200mW
048-cycle
28-Pin
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zd107
Abstract: No abstract text available
Text: A H i^h P crform ,iin i ZM X H CMOS DRAM \S4I C 2M 8S0 _! \i x 8 CMOS Syiithronmis DRAM Advance information Features • Organization: 1,048,576 w ords x 8 bits x 2 banks • All signals referenced to positive edge o f clock • Dual internal banks controlled by BA
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OCR Scan
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44-pin
zd107
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