MC145483
Abstract: DSP56800 DSP568XX nortel codec 32Kx16
Text: Low Speed Modem PSTN RX Nortel Proprietary Phone Line I/F 13 Bit Linear CODEC MC145483 SSI CODEC B 16-Bit DSP568XX SPI Microcontroller Microcontroller 32Kx16 SRAM PORTA Card Reader Boot ROM Application Description This document describes the implementation of a low speed modem using the DSP56800 family
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MC145483
16-Bit
DSP568XX
32Kx16
DSP56800
DSP56L811
22bis
42/LAPM
MC145483
DSP568XX
nortel codec
32Kx16
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IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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UT69151
Abstract: 32Kx16 80C86 UT22VP10 UT7156
Text: Shared Memory Interface to UT69151 SµMMITTM VDD 80C86 MN/MX ALE ADDRESS LATCH C OE DATA AD19-AD0 OUT 32Kx16 SRAM 3 Latches required RD HLDA HOLD DT/R UT54ATCS373 ADDRESS DATA CS RD WR M/IO CLK UT7156 CLK 32Kx16 SRAM VDD ADDRESS DATA VDD Sµmmit VDD RRD RWR
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UT69151
80C86
AD19-AD0
32Kx16
UT54ATCS373
UT7156
64Kx16
D15-D0
32Kx16
80C86
UT22VP10
UT7156
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HT56R678
Abstract: bank
Text: HT56R678 中如何將副程式放在 Bank3 去執行 HT56R678 中如何將副程式放在 Bank3 去執行 文件編碼：HA0184T 簡介 HT56R678 之 MCU 內有 OTP Programmable Memory 32Kx16 Bits，分成 4 個 ROM Bank，分別 爲 Bank0Bank1、Bank2、Bank3，本文主要介紹如何將副程式放在 Bank3 去執行。
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HT56R678
HA0184T
32Kx16
0000H
HT56R678
bank
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Untitled
Abstract: No abstract text available
Text: HT56R26 將 Subroutine 放在 ROM Bank3 之應用程式 HT56R26 將 Subroutine 放在 ROM Bank3 之 應用程式 文件編碼：HA0218T 簡介 HT56R26 之 MCU 內有 OTP Programmable Memory 32Kx16 Bits，分成 4 個 ROM Bank，分別爲 Bank0Bank1、Bank2、Bank3，本文主要介紹如何將副程式放在 Bank3 去執行。
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HT56R26
HA0218T
32Kx16
0000H
HT56R26
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Untitled
Abstract: No abstract text available
Text: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs
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TMS320F28377D,
TMS320F28376D
SPRS880
TMS320F2837xD
TMS320C28xâ
32-Bit
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encoder 200 43
Abstract: TMS320x2806x
Text: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066 TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062 SPRS698B – NOVEMBER 2010 – REVISED JULY 2011 www.ti.com Piccolo Microcontrollers Check for Samples: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066,
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TMS320F28069,
TMS320F28068,
TMS320F28067,
TMS320F28066
TMS320F28065,
TMS320F28064,
TMS320F28063,
TMS320F28062
SPRS698B
encoder 200 43
TMS320x2806x
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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EPD3330
Abstract: 614k EM65168 SEG80
Text: EPD3330 RISC II Series Microcontroller Product Specification DOC. VERSION 2.5 ELAN MICROELECTRONICS CORP. January 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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EPD3330
EPD3330
614k
EM65168
SEG80
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colour television block diagram
Abstract: phillips circuits horizontal flyback basic television block diagram phillips handbook television internal parts block diagram TV Tuner phillips 21 Z89C00 Z90361 Z90365 16x16 rgb led matrix
Text: Z90361 OTP Z90365 ROM 32 KWORD TELEVISION CONTROLLER WITH OSD PRODUCT SPECIFICATION PS002500-TVC1099 ZiLOG WORLDWIDE HEADQUARTERS • 910 E. HAMILTON AVENUE • CAMPBELL, CA 95008 ZiLOG Worldwide Headquarters 910 E. Hamilton Avenue Campbell, CA 95008 Telephone: 408.558.8500
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Z90361
Z90365
PS002500-TVC1099
colour television block diagram
phillips circuits horizontal flyback
basic television block diagram
phillips handbook
television internal parts block diagram
TV Tuner phillips 21
Z89C00
16x16 rgb led matrix
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tic 122
Abstract: PCM24 GP10 siemens tic transformer
Text: ICs for Communications Enhanced ISDN Data Access Controller ISAR 34 PSB 7115 Version 2.1 Product Overview 07.97 T7115-XV21-O2-7600 PSB 7115 Revision History: Current Version: 07.97 Previous Version: 03.97 Page Page in previous (in current Version Version)
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T7115-XV21-O2-7600
tic 122
PCM24
GP10
siemens tic transformer
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16-Bit Microprocessors
Abstract: ELECTRONIC ARRAYS memory
Text: m o EDI9F3420C \ ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory anrays in a single
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EDI9F3420C
128Kx16
32Kx16
EDI9F3420C
EDI9F3420C,
110ns.
130ns,
150ns.
16-Bit Microprocessors
ELECTRONIC ARRAYS memory
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Untitled
Abstract: No abstract text available
Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
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SRAM 64KX8 5V
Abstract: No abstract text available
Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O
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256K-
128KX8
64KX16
64KX8
32KX16
32KX8
128KX8
28gxl6|
SRAM 64KX8 5V
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Untitled
Abstract: No abstract text available
Text: High Performance AS7C513 A S7C 3513 32KX16 CMOS SRAM A 3 2 K X 1 6 CM O S SRAM Advance information Features • Organization: 32,768 words x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low power consumption
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AS7C513
32KX16
44-pin
R00344R
AS7C3513
AS7C513-12JC
AS7C513-15
AS7C3513-15JC
AS7C513-20JC
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32Kx16
Abstract: Intel EEPROM 32kx8
Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4
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32Kx8
64KX8
32KX16
128KX8
64KX16
32KX32
64KX32
512KX8
256KX16
Intel EEPROM 32kx8
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M5M51001BJ20L
Abstract: M5M51001BJ25 M5M5278DVP20L M5M51004BJ-20 M5M51001BJ-25 M5M5278DVP-20L M5M5278DJ-15L M5M51001BP-25 M5M5278DJ-15 M5M51001BJ-20
Text: M EMORIES • H IG H SPEED STATIC RAMs CONTINUED Memory Configuration Memory capacity Max. access time (rw> Function mtxle !cc Stand by= 50 pA (Vcc= 3.0V) Low Power Version 20 32Kx8 256K 10 12 10 12 32Kx16 512K 15 15 | 20 25 !Mx1 Ice Stand by= 50 ^ A ! 20
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M5M5278DP-15L
M5M5278DJ-15L
M5M5278DFP-1
M5M5278DVP-15L
M5M5278DP-20t_
M5M5278DJ-20L
M5M5278DFP-20L
M5M5278DVP-20L
M5M5278EJ-10
M5M5278EVP-10
M5M51001BJ20L
M5M51001BJ25
M5M5278DVP20L
M5M51004BJ-20
M5M51001BJ-25
M5M51001BP-25
M5M5278DJ-15
M5M51001BJ-20
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Untitled
Abstract: No abstract text available
Text: WD\ EDI8F1664C-PSC m m ELECTRONIC DESIGNS, INC. 64Kx16 SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMs are organized as two banksof 32Kx16 bits
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EDI8F1664C-PSC
64Kx16
EDI8F1664C-PSC
32Kx8
32Kx16
100ns
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A934
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
A934
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PDF
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05N14
Abstract: AS7C3513 AS7C513
Text: H ig h P e r fo r m a n c e 3 2 K x 16 32Kx16 CM O S SRAM „ AS7C513 | | A S 7 C 3 5 13 32K x 16 CMOS SRAM Advance information • T T L -com patible, th ree-state I/O • 4 4 -p in JEDEC sta n d ard package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II • C enter p o w e r a n d g ro u n d pin s
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32KX16
AS7C513
AS7C3513
44-pin
AS7C3513)
cJQD34H
AS7C513-12JC
AS7C513-1SJC
05N14
AS7C3513
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CD2025
Abstract: AS7C3513 AS7C513 AS7CS13-15TC 07LH LA014
Text: H ig h P erfo rm a n ce 32KX16 CMOS SRAM A S7 C 5 1 3 A S 7 C 3 5 13 A 3 2 K X 1 6 C M O S SRAM Advance information Features • Organization: 3 2 ,7 6 8 w ords x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 / 8 / 1 0 ns output enable access tim e
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32KX16
AS7C513
AS7C3513
44-pin
AS7C3513)
T00344T
AS7C3513
AS7CS13-12JC
CD2025
AS7CS13-15TC
07LH
LA014
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Untitled
Abstract: No abstract text available
Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a
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EDI8M1664C50/60/70/85/100
64Kx16
EDI8M1664C
32Kx8
32Kx16bitseach.
DQ8-DQ15)
EDI8M81664C
EDI8U1664C50/60/70/85/100
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION: The Dense-Pac 32K X 8S family consists of CM OS +5V 32K X 8 Electrically Eraseable Programmable Read-Only Memories EEPROM s . These EEPROM modules are ideal for applications which require low power consumption, non volatility and in-system reprogrammability. The endurance,
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deterE42568S-300I
DPE42568S-250M
DPE42568S-350M
DPE45128S-250C
DPE45128S-350C
DPE45128S-300I
DPE45128S-250M
DPE45128S-350M
DPE45129S-250C
DPE45129S-350C
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