Untitled
Abstract: No abstract text available
Text: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors
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AS29LL800
8/512Kx
speci20TC
S29LL800-120TI
S29LL800-150TC
S29LL800-150TI
AS29LL800-200TC
S29LL800-200TI
AS29LL800-120SC
AS29LL800-120SI
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AS29
Abstract: 11100M
Text: Advance information •■ AS29LL800 1 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features • O rg an izatio n : 1M x 8 /5 1 2 K x 16 • Sector arch itec tu re - O n e 16K; tw o 8K; o n e 32K; an d fiftee n 64K b y te sectors - O n e 8K; tw o 4K; o n e 16K; an d fiftee n 32K w o rd sectors
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AS29LL800
1Mx8/512Kx16
1Mx8/512Kx16
12x20
48-pin
9LL800-120TC
AS29LL800-120TI
AS29LL800-150TC
AS29LL800-150TI
AS29LL800-200TC
AS29
11100M
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS29LL800 A 2.2V !Mx8/512Kxl6 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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AS29LL800
Mx8/512Kxl6
8/512K
64Kbyte
32Kword
write/LL800T150SC
AS29LL800T150SI
AS29LL800T200SC
AS29LL800T200SI
44-pin
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AS4C256K16F0-60JC
Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization
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AS7C164-
AS7C164-8JC
64-10JC
AS7C164L-I
AS7C164-12PC
AS7C164L-1
AS7C164L-UJC
AS7C2S6-12PC
AS7C164-1SPC
64L-I5PC
AS4C256K16F0-60JC
AS7C164-20PC
AS7CI64-20JC
AS4LC1M16ES-50TC
120TC
28K1
AS4C1440S
1SPC
AS29F040-120TC
as7c3
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land pattern for TSOP 2 54 pin
Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Text: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current
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AS29LL8Ü
8/512K
48-pin
land pattern for TSOP 2 54 pin
land pattern for TSOP 56 pin
TSOP 54 land pattern
40013A
land pattern for TSOP
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SRAM 64KX8 5V
Abstract: No abstract text available
Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O
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256K-
128KX8
64KX16
64KX8
32KX16
32KX8
128KX8
28gxl6|
SRAM 64KX8 5V
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SRAM 64KX8 5V
Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164
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AS7C164
AS7C256
AS7C512
AS7C513
AS7C3513
AS7C1024
AS7C31024
AS7C1026
AS7C31026
AS7C1025
SRAM 64KX8 5V
128U K
SRAM 512*8
SRAM
3.3v 1Mx8 SRAM
edo dRAM
AS7C40
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AS4C1M16FS
Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423
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AS29F002
j4S29F03
AS29F040
AS29F080
AS29F200
AS29F400
AS291X008
AS29LL800
AS29LV002
AS29LV008
AS4C1M16FS
1Mx16 flash
3.3v 1Mx8 SRAM
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Untitled
Abstract: No abstract text available
Text: Advance information Features •Organization: !M x 8 /5 1 2 K x l6 • Sector architecture • Low power consumption - 8 m A ty p ic a l r e a d c u rre n t - O n e 16 K ; t w o 8 K ; o n e 3 2 K ; a n d fifte e n 6 4 K b y te se c to rs - 1 6 m A ty p ic a l p r o g r a m c u rre n t
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S29LL800
1-40013-A.
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