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    KM44V1 Price and Stock

    Samsung Semiconductor KM44V1000BLJ-7

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    SEC/99 KM44V1004DJ-6

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    Samsung Semiconductor KM44V16100AK-6

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    Quest Components KM44V16100AK-6 373
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    Samsung Semiconductor KM44V16004BK-6

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    Samsung Semiconductor KM44V16100AS-6

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    KM44V1 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44V1000D Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJL-6 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM44V1000DJL-7 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM44V1000DT-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-L-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-L-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DTL-6 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM44V1000DT-L-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DTL-7 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM44V1004DJ-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DT-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM44V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000C,KM44V16100C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are


    Original     		PDF KM44V16000C KM44V16100C 16Mx4 400mil

    3125uS

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		PDF KM44V16004B, KM44V16104B 16Mx4 400mil 3125uS

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),


    Original     		PDF KM44C1004D, KM44V1004D 41bit andM44V1004D 300mil

    dram 4bit

    Abstract: No abstract text available
    Text: KM44V16000B, KM44V16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are


    Original     		PDF KM44V16000B, KM44V16100B 16Mx4 400mil dram 4bit

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1004C, KM44V1004C 7TbM14E

    Untitled

    Abstract: No abstract text available
    Text: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF KM44V16100AK 16Mx4 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44V16000B, KM44V161OOB 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consum ption(Norm al or Low power) are


    OCR Scan     		PDF KM44V16000B, KM44V161OOB 16Mx4 400mil

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF KM44V16000AS 16Mx4

    44v100

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10


    OCR Scan     		PDF KM44V1000BLL 130ns KM44V1000BLL-8 150ns KM44V1000BLL-10 100ns 180ns KM44V1000BLL-7 cycles/128ms 20-LEAD 44v100

    KM44V1000C

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation


    OCR Scan     		PDF KM44V1OOOC/CL/CLL KM44V1000C/CL/CLL-6 110ns KM44V1000C/CL/CLL-7 130ns KM44V1000C/CL/CLL-8 KM44V1000C/CL/CLL 150ns 20-LEAD KM44V1 KM44V1000C

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1000DJ 16Mx4, 512Kx8) GD3474Ã 7Tb4142 GG3474T

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44V1004C/CL/CLL 1 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC KM44V1004C/CL/CLL-6 60ns 15ns 110ns 24ns KM44V1004C/CL/CLL-7 70ns 20ns 130ns 29ns KM44V1004C/CL/CLL-8 80ns


    OCR Scan     		PDF KM44V1004C/CL/CLL KM44V1004C/CL/CLL-6 110ns KM44V1004C/CL/CLL-7 130ns KM44V1004C/CL/CLL-8 150ns cycles/16ms cycles/128m: 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1004C, KM44V1004C b41H2 Q0231Ã

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d


    OCR Scan     		PDF KM44C1000D, KM44V1000D 1024cycles 0G37Gflc

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DT 1b4142

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10 100ns 25ns 180ns KM44V1000BLL-7 • • • • •


    OCR Scan     		PDF KM44V1000BLL KM44V1000BLL-7 KM44V1000BLL-8 KM44V1000BLL-10 100ns 130ns 150ns 180ns KM44V1000BLL

    ICE ICC3

    Abstract: 44v16100
    Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,


    OCR Scan     		PDF KM44V16000A, KM44V16100A ICE ICC3 44v16100

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),


    OCR Scan     		PDF KM44C1004D, KM44V1004D 100us,

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan     		PDF KM44V16004B, KM44V16104B 16Mx4

    IC07

    Abstract: KM44C1000D KM44V1000D
    Text: KM44V1000DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Rags Mode CMOS DRAMs. Fast Pag Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1000DJ 71b4142 IC07 KM44C1000D KM44V1000D

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DJ 16Mx4, 512Kx8) 7Th4142 D347c

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000C,KM44V161OOC CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 16,777,216 x 4 bit Fast Page M ode C M O S DR AM s. Fast Page M ode offers high speed random acce ss o f m em ory cells w ith in th e sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5 o r -6), po w e r co n su m p tio n (N o rm a l o r Low pow er) are


    OCR Scan     		PDF KM44V16000C KM44V161OOC 400mil

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000C, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1000C, KM44V1000C 1024cycles G231tic

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1004C, KM44V1004C