Untitled
Abstract: No abstract text available
Text: DRAM MODULE 364V120CJ/CT 364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS
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KMM364V120CJ/CT
KMM364V120CJ/CT
1Mx64
364V120C
KMM364V120C
110ns
130ns
48pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 364V120CJ/CT 364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The 364V120C - 6 K M M 364V120C - 7
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KMM364V120CJ/CT
1Mx64
KMM364V120CJ/CT
364V120C
48pin
168-pin
KMM364V120C
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IBM 1Mx4
Abstract: 1MX16
Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V
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1Mx64
364C120C
KMM364C124A
C-421000AA64
HB56A164EJ
364V120C
364V124A
372C122C
372C125A
05H0902
IBM 1Mx4
1MX16
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372C
Abstract: No abstract text available
Text: 2. PRODUCT GUIDE Org. Part No. Feature Based DRAM Speed ns PCB Height Refresh cycle/ms c/s 50/60/70 60/70 1,000 1024/16 NOW 1,000 1024/16 NOW 50/60/70 1,000 1024/16 TBD 60/70 1,000 1024/16 TBD 8 Byte DIMM ( 5 V ) 1Mx64 1 Mx72 2Mx64 2Mx72 4M x64 4MX72 K M M 3 6 4 C 1 2 0C
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1Mx64
372C120C1
372E120C1
372C122C
2Mx64
2Mx72
1Mx32
332V104A
332V124A
2Mx32
372C
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