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    IRF9621 Search Results

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    IRF9621 Price and Stock

    Harris Semiconductor IRF9621

    3.5 A, 150 V, 1.5 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF9621 163
    • 1 $5.28
    • 10 $2.64
    • 100 $2.288
    • 1000 $2.288
    • 10000 $2.288
    		Buy Now

    IRF9621 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9621 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9621 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9621 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRF9621 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9621 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9621 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9621 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9621 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9621 Unknown FET Data Book Scan PDF
    IRF9621 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF9621 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V PDF

    IRF3620

    Abstract: IR 9622 1RF9620 irf9620 1RF9622 9623 9621 3919 ir 9621 IRF9622
    Text: SI LICONIX INC 1ÔE D • 0254735 0 0 1 4 7 4 e} 2 ■ IRF9620/9621/9622/9623 incorporated P-Channel Enhancement Mode Transistors " P 3 P I- R TO-220AB TOR VIEW PRODUCT SUMMARY O PART NUMBER V BRJDSS IRF3620 200 1.5 3.5 IRF9621 150 1.5 3.5 IRF9622 200 2.4


    OCR Scan     		A25473S IRF9620/9621Z9622/9623 O-220AB IRF3620 IRF9621 IRF9622 IRF9623 Pow/9623 T-39-19 f9621, IR 9622 1RF9620 irf9620 1RF9622 9623 9621 3919 ir 9621 PDF

    irf9620

    Abstract: IRF9622 irf9623 IRF9621 st 9622 9620 ir
    Text: Rugged Power MOSFETs File Number IRF9620, IRF9621 IRF9622, IRF9623 2283 Avalanche-Energy-Rated P-Channel Power MOSFETs -3 A and -3.5 A, -150 V and -200 V rDsioni = 1 .5 0 and 2.4 f i t e r m i n a l d ia g r a m Features: • Single pulse avalanche energy rated


    OCR Scan     		IRF9620, IRF9621 IRF9622, IRF9623 92CS-43262 IRF9621, IRF9622 IRF9623 irf9620 IRF9621 st 9622 9620 ir PDF

    F9622

    Abstract: IRF9622 NP-Q40 F962
    Text: HARRIS IR F9620, IRF9621 IR F9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s Package T 0 -2 2 0 A B • -3A and -3.5A , -1 5 0 V and -200V • r D S O N TOP VIEW = 1 -5 0 and 2 .4 Cl • Single Pulse Avalanche Energy Rated


    OCR Scan     		F9620, IRF9621 F9622, IRF9623 -200V IRF9620, IRF9621, IRF9622 IRF9623 RF9620, F9622 NP-Q40 F962 PDF

    irf P-Channel MOSFET audio

    Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
    Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:


    OCR Scan     		SS452 T-39-19 IRFS620 IRFSG21 T0-220AB IRF9620, IRF9621, IRF9622, IRF9623 irf P-Channel MOSFET audio IRF610 complementary F9622 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620 PDF

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure


    OCR Scan     		IRF9620/9621 IRF9622 F9621 IRF9620 IRF9621 IRF9623 IRF9620/9621Ã Q01E57b PDF

    F9222

    Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
    Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance


    OCR Scan     		IRF9620/9621 IRFP9220/9221 IRF9220/9221 F9620/IR IRF9220 IRF9621 /IRFP9221 IRF9221 F9622/IR IRF9222 F9222 f 9222 l ir 9621 f9223 F9222 L F9222 T IRFP9620 IRFP9220 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


    OCR Scan     		SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631 PDF

    IRFP040

    Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
    Text: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max


    OCR Scan     		O-220 IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRFP040 IRFP141 IRFP142 IRFP143 irfp245 IRF9620 IRF9632 IRF9643 PDF

    1RF9540

    Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
    Text: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0


    OCR Scan     		IRF9540 O-220AB IRF9541 F9542 O-220 IRF9543 IRF961G 1RF9540 IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9620 PDF

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


    OCR Scan     		Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613 PDF

    1RF9620

    Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
    Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542


    OCR Scan     		-25cC) IRF9240 IRFS241 25F9542 O-220 IRF9543 IRF961G IRF9612 1RF9620 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    irf9620

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9620/9621 FEATURES • Low er R d s i o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged p olysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		IRF9620/9621 O-220 IRF9620 -200V IRF9621 -150V PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    1rf740

    Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
    Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-


    OCR Scan     		1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13 PDF

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221 PDF

    IRF9670

    Abstract: IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9623 IRF9523
    Text: Data Sheet No. PD-9.351E in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS IRF962Q IRF96S1 P-CHANIMEL 200 VOLT POWER MOSFETs IRFS622 IRF9623 -200 Volt, 1.5 Ohm H E X FE T T0-220A B Plastic Package T h e H E X F E T * te ch n o lo gy la th e h e y to im em afconai R e c tifie rs


    OCR Scan     		O-220AB IRF610 05BVOSS C-359 IRF9620, IRF9621, IRF9622, IRF9623 C-360 IRF9670 IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9523 PDF