Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF630 Search Results

    SF Impression Pixel

    IRF630 Price and Stock

    Infineon Technologies AG IRF630NPBF

    MOSFET N-CH 200V 9.3A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630NPBF Tube 6,595 1
    • 1 $1.65
    • 10 $1.65
    • 100 $1.65
    • 1000 $0.50626
    • 10000 $0.42288
    		Buy Now
    Avnet Americas IRF630NPBF Tube 4,390 10 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    IRF630NPBF Tube 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    IRF630NPBF Bulk 16 Weeks, 4 Days 1
    • 1 $1.07
    • 10 $0.903
    • 100 $0.766
    • 1000 $0.559
    • 10000 $0.559
    		Buy Now
    Mouser Electronics IRF630NPBF 5,228
    • 1 $0.99
    • 10 $0.772
    • 100 $0.615
    • 1000 $0.439
    • 10000 $0.422
    		Buy Now
    Newark IRF630NPBF Bulk 227 1
    • 1 $0.404
    • 10 $0.404
    • 100 $0.404
    • 1000 $0.37
    • 10000 $0.37
    		Buy Now
    Rochester Electronics IRF630NPBF 700 1
    • 1 $0.4934
    • 10 $0.4934
    • 100 $0.4638
    • 1000 $0.4194
    • 10000 $0.4194
    		Buy Now
    TME IRF630NPBF 216 1
    • 1 $0.902
    • 10 $0.486
    • 100 $0.434
    • 1000 $0.385
    • 10000 $0.34
    		Buy Now
    Ameya Holding Limited IRF630NPBF 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Chip 1 Exchange IRF630NPBF 1,508
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Chip1Stop IRF630NPBF 148,404
    • 1 -
    • 10 $0.697
    • 100 $0.481
    • 1000 $0.291
    • 10000 $0.259
    		Buy Now
    IRF630NPBF Tube 13,874
    • 1 -
    • 10 $0.362
    • 100 $0.225
    • 1000 $0.222
    • 10000 $0.222
    		Buy Now
    IRF630NPBF 9,019
    • 1 -
    • 10 $0.5032
    • 100 $0.4532
    • 1000 $0.3698
    • 10000 $0.3589
    		Buy Now
    IRF630NPBF 2,263
    • 1 -
    • 10 $0.411
    • 100 $0.324
    • 1000 $0.324
    • 10000 $0.324
    		Buy Now
    IRF630NPBF 1,160
    • 1 $0.811
    • 10 $0.811
    • 100 $0.587
    • 1000 $0.49
    • 10000 $0.49
    		Buy Now
    EBV Elektronik IRF630NPBF 96,000 11 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation IRF630NPBF 1,300 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.2857
    • 10000 $0.2667
    		Buy Now
    Win Source Electronics IRF630NPBF 238,874
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.218
    • 10000 $0.189
    		Buy Now
    Wuhan P&S IRF630NPBF 1,000 1
    • 1 $0.53
    • 10 $0.53
    • 100 $0.44
    • 1000 $0.38
    • 10000 $0.38
    		Buy Now

    Rochester Electronics LLC IRF630

    MOSFET N-CH 200V 9A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630 Tube 353
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.85
    • 10000 $0.85
    		Buy Now

    Vishay Siliconix IRF630L

    MOSFET N-CH 200V 9A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630L Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Siliconix IRF630S

    MOSFET N-CH 200V 9A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630S Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG IRF630NL

    MOSFET N-CH 200V 9.3A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630NL Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more IRF630 price and stock on Findchips.com

    IRF630 Datasheets (115)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF630 Fairchild Semiconductor 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs Original PDF
    IRF630 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF630 Intersil 9A, 200V, 0.400 ?, N-Channel Power MOSFETs Original PDF
    IRF630 Philips Semiconductors N-Channel TrenchMOS Transistor Original PDF
    IRF630 STMicroelectronics N-CHANNEL 200V - 0.35 ? - 9A - TO-220-TO220-FP Original PDF
    IRF630 STMicroelectronics N-Channel 200V - 0.35W - 9A - TO-220-FP MESH OVERLAY MOSFET Original PDF
    IRF630 STMicroelectronics N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET Original PDF
    IRF630 STMicroelectronics N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET Original PDF
    IRF630 Temic Semiconductors 8-bit CMOS Microcontroller 0-60 MHz Original PDF
    IRF630 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF630 Transys Electronics Power MOSFET Original PDF
    IRF630 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
    IRF630 FCI POWER MOSFETs Scan PDF
    IRF630 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF630 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF630 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
    IRF630 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF630 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Scan PDF
    IRF630 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF630 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 9A, Pkg Style TO220AB Scan PDF

    IRF630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF630M

    Abstract: IRF630MFP
    Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP

    ISL 2651

    Abstract: 630n
    Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    IRF630PBF

    Abstract: No abstract text available
    Text: PD- 95916 IRF630PbF • Lead-Free Document Number: 91031 9/27/04 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031


    Original     		PDF IRF630PbF 12-Mar-07 IRF630PBF

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


    Original     		PDF IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V


    Original     		PDF O-220 IRF630 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF630 O-220

    Untitled

    Abstract: No abstract text available
    Text: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)


    Original     		PDF IRF630B

    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11

    IRF630SPBF

    Abstract: 95118
    Text: PD - 95118 IRF630SPbF • Lead-Free www.irf.com 1 3/17/04 IRF630SPbF 2 www.irf.com IRF630SPbF www.irf.com 3 IRF630SPbF 4 www.irf.com IRF630SPbF www.irf.com 5 IRF630SPbF 6 www.irf.com IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRF630SPbF EIA-418. IRF630SPBF 95118

    Untitled

    Abstract: No abstract text available
    Text: IRF630 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling D Fast Switching Characteristic Simple Drive Requirement G BVDSS 200V RDS ON 0.4 ID 9.0A S Description G APEC MOSFET provide the power designer with the best combination of fast


    Original     		PDF IRF630 O-220 20acteristics 100us

    IRF630

    Abstract: TD 1409
    Text: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol


    Original     		PDF IRF630 -20VDC 160VDC, 20VDC 10VDC, O-220-AB IRF630 TD 1409

    IRF630S

    Abstract: No abstract text available
    Text: IRF630S Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate Charge QGS Gate to Drain Charge QGD Input Capacitance CISS


    Original     		PDF IRF630S 160VDC, 10VDC 25VDC, 100VDC, IRF630S

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 O-220 O-220 12-Mar-07

    AN-994

    Abstract: IRF630NL IRL3103L
    Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET


    Original     		PDF IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. AN-994 IRF630NL IRL3103L

    irf630

    Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP irf630 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


    OCR Scan     		PDF IRF630 O-220 irf630 RD161

    SEC irf630

    Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
    Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630

    IRF630R

    Abstract: IRF633R rf630 IRF631R IRF632R
    Text: Rugged Pow er M O S F E T s - IRF630R, IRF631R, IRF632R, IRF633R F ile N u m b e r 1990 Avalanche Energy Rated N-Channel Power MOSFETs 8.0A and 9.0A, 150V-200V rDs on = 0.40 and 0.60 N -C H A N N EL E N H A N C EM EN T M O D E D Features:


    OCR Scan     		PDF IRF630R, IRF631R, IRF632R, IRF633R 50V-200V 92CS-4ZCS8 IRF632R IRF633R IRF630R rf630 IRF631R

    Untitled

    Abstract: No abstract text available
    Text: IRF630S N - CHANNEL 200V - 0.35Î2 - 9A - D2PAK MESH OVERLAY MOSFET TYPE V IR F 630 S • . . . . . dss 200 V R d S o i i < 0 .4 0 Q. Id 9 A TYPICAL R D S (on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF IRF630S O-263

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF630, RF1S630SM 400i2

    c125t

    Abstract: IRF630A 2u 57 diode
    Text: IRF630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VDS= 200V - ^DS(on) =


    OCR Scan     		PDF IRF630A O-220 IRF63 c125t IRF630A 2u 57 diode