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    Vishay Siliconix IRF610PBF

    MOSFET N-CH 200V 3.3A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610PBF Tube 17,317 1
    • 1 $0.77
    • 10 $0.77
    • 100 $0.5466
    • 1000 $0.50764
    • 10000 $0.50764
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    RS IRF610PBF Bulk 1,000
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    • 1000 $1.06
    • 10000 $1.01
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    Quest Components IRF610PBF 476
    • 1 $1.59
    • 10 $1.59
    • 100 $0.795
    • 1000 $0.636
    • 10000 $0.636
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    New Advantage Corporation IRF610PBF 13,800 1
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    • 1000 $0.4071
    • 10000 $0.4071
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    Vishay Siliconix IRF610PBF-BE3

    MOSFET N-CH 200V 3.3A TO220AB
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    DigiKey IRF610PBF-BE3 Tube 5,627 1
    • 1 $1
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    • 100 $0.5855
    • 1000 $0.57376
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    Rochester Electronics LLC IRF610B

    N-CHANNEL POWER MOSFET
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    DigiKey IRF610B Bulk 3,625 888
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    • 1000 $0.34
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    Rochester Electronics LLC IRF610S2497

    3.3A 200V 1.500 OHM N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610S2497 Bulk 1,150 1,150
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    • 10000 $0.19
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    Vishay Siliconix IRF610SPBF

    MOSFET N-CH 200V 3.3A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610SPBF Tube 997 1
    • 1 $1.77
    • 10 $1.77
    • 100 $1.0819
    • 1000 $0.79831
    • 10000 $0.69875
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    Find more IRF610 price and stock on Findchips.com

    IRF610 Datasheets (65)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRF610 Fairchild Semiconductor 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Original PDF
    IRF610 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF610 Intersil 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRF610 Texas Instruments High-Speed CMOS Logic Quad D-Type Flip-Flop with Reset Original PDF
    IRF610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A TO-220AB Original PDF
    IRF610 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
    IRF610 FCI POWER MOSFETs Scan PDF
    IRF610 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF610 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF610 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF610 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 3.3A, Pkg Style TO-220AB Scan PDF
    IRF610 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF610 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF610 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 3.3A, Pkg Style TO220AB Scan PDF
    IRF610 Motorola Switchmode Datasheet Scan PDF
    IRF610 Motorola European Master Selection Guide 1986 Scan PDF
    IRF610 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF610 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF610 Datasheets Context Search

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    PDF

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610 PDF

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan     		IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20 PDF

    irf 2203

    Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
    Text: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF610B/IRFS610B IRF610B O-220-3 FP001 irf 2203 IRF610B_FP001 IRF*_FP001 IRF 870 irf 146 PDF

    IRF610

    Abstract: power MOSFET IRF610 33a marking
    Text: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS


    OCR Scan     		IRF610 O-220 IRF610 power MOSFET IRF610 33a marking PDF

    intersil irf610

    Abstract: IRF610 TB334 power MOSFET IRF610
    Text: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRF610 TA17442. intersil irf610 IRF610 TB334 power MOSFET IRF610 PDF

    IRF610

    Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		IRF610, SiHF610 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF610 MOSFET dynamic irf610pbf power MOSFET IRF610 PDF

    IRF013

    Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF610/611/612/613 O-220 IRF610 IRF611 IRF612 IRF613 IRF013 D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q 613 33A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11 PDF

    IRF610A

    Abstract: No abstract text available
    Text: IRF610A Advanced Power M O SFET FEATURES D S S • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 10 |jA (M a x .) @ M Low


    OCR Scan     		IRF610A O-220 IRF610A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF610S, SiHF610S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF610

    Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
    Text: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF610, IRF611, IRF612, IRF613 TA17442. IRF610 power MOSFET IRF610 IRF611 irf610 mosfet irf612 PDF

    EIA-541

    Abstract: IRF6100 4.5v to 100v input regulator
    Text: PD - 93930A IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		3930A IRF6100 OT-23 EIA-481 EIA-541. 5M-1994. EIA-541 IRF6100 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current . 10 nA{M ax. BV,DSS 200 V ^D S o n ) =


    OCR Scan     		IRF610A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max @ VDS= 200V = 200 V


    OCR Scan     		IRF610A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF610S, SiHF610S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF610

    Abstract: TB334 power MOSFET IRF610 IRF61
    Text: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRF610 TA17442. IRF610 TB334 power MOSFET IRF610 IRF61 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRF610 1-500i2 PDF

    IRF610S

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF610S, SiHF610S O-263) 2002/95/EC 11-Mar-11 IRF610S PDF

    EIA-541

    Abstract: IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator
    Text: PD - 93930C IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		93930C IRF6100 OT-23 5M-1994. EIA-541 IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator PDF

    smd 33a

    Abstract: 1RF610 33A SMD DIODE smd diode JJ AN-994 IRF610S SMD-220
    Text: International IS Rectifier PD-9.899 IRF610S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^ D S o n = 1 -5 ß


    OCR Scan     		IRF610S SMD-220 smd 33a 1RF610 33A SMD DIODE smd diode JJ AN-994 IRF610S PDF

    IRF610

    Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
    Text: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power


    OCR Scan     		IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4ASS4S2 0D14b6b ATS « I N R International E5R Rectifier HEXFET Power MOSFET • • • • • • • PD-9.899 IRF610S INTERNATIONAL R E C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avaianche Rated Fast Switching


    OCR Scan     		0D14b6b IRF610S SMD-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96012A IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		6012A IRF6100PbF OT-23 Interna08] EIA-481 EIA-541. PDF

    irf610

    Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF610/611/612/613 IRF610 IRF61 IRF612 IRF613 power MOSFET IRF610 irf610 mosfet pulse electronics era irf610 samsung PDF