Untitled
Abstract: No abstract text available
Text: SHD234001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 259 REV - QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs FEATURES: 4 independent channels 4 electrically isolated dice Low threshold High input impedance Low input capacitance Fast switching speed
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SHD234001
CERDIP-14
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
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BSS87
SC-62)
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DMOSFET
Abstract: ZCP0545A
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.
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ZCP0545A
DMOSFET
ZCP0545A
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westinghouse transistors
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,
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10-kV
westinghouse transistors
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Untitled
Abstract: No abstract text available
Text: SHD234001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 259 REV - QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs FEATURES: 4 independent channels 4 electrically isolated dice Low threshold High input impedance Low input capacitance Fast switching speed
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SHD234001
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DMOSFET
Abstract: high speed solid state relay DN3145N8 D-MOSFET depletion-mode DN3145 Low On-Resistance - Solid State Relays
Text: Product Summary Sheet DN3145 N-Channel Depletion-Mode DMOSFET SMPS Start-Up Circuit Solid State Relays Current Limiter Up to 450V Applications - ILED DN3145N8 - Solid state relays - Converters - Constant current sources DN3145N8 To Vcc of PWM IC + Photovoltaic
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DN3145
DN3145N8
DN3145
120pf
DMOSFET
high speed solid state relay
DN3145N8
D-MOSFET
depletion-mode
Low On-Resistance - Solid State Relays
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ZVN4106F
Abstract: MARKING MZ ZVN4106FTA Marking MZ ZVN4106F
Text: A Product Line of Diodes Incorporated ZVN4106F 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET IN SOT23 Features Mechanical Data • • • • • • • • BVDSS > 60V RDS on ≤ 2.5Ω @ VGS = 10V Maximum continuous drain current ID = 200mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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ZVN4106F
200mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS33360
ZVN4106F
MARKING MZ
ZVN4106FTA
Marking MZ ZVN4106F
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device
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BSS192
SC-62)
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tvs 6ae
Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
Text: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm
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SMA6F20A
23-Nov-11
VMN-PT0322-1206
tvs 6ae
marking 6ap
6bg 92 M
600-AG
6BG TVS
GENERAL SEMICONDUCTOR diodes marking code me
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a4954
Abstract: A4954ELP-T FAST DMOS FET Switches LSS12 LSS-34 A4954ELPTR-T
Text: A4954 Dual Full-Bridge DMOS PWM Motor Driver Description Features and Benefits • Low RDS on outputs • Overcurrent protection (OCP) ▫ Motor short protection ▫ Motor lead short to ground protection ▫ Motor lead short to battery protection • Low Power Standby mode
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A4954
A4954ELP-T
FAST DMOS FET Switches
LSS12
LSS-34
A4954ELPTR-T
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mosfet 1500v for smps
Abstract: VIPower DMOSFET mosfet 1500v transistor bipolar driver schematic bipolar transistor 1500v mosfet schematic dc motor driver emitter switched bipolar transistor series connection of mosfet "gate voltage" negative voltage in a ratio of resistances of the resistors
Text: DISCRETE AND STANDARD ICs GROUP VIPOWER M3 A NEW SMART POWER TECHNOLOGY FOR HIGH VOLTAGE, HIGH SPEED APPLICATIONS A fter several years of experience using the well consolidated VIPower M0 and M1 technologies, ST is now introducing the innovative, versatile and cost-effective,
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DMOSFET
Abstract: ZCN0545A
Text: ZCN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 MAY 94 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Forward Drain-Source Breakdown Voltage BVDSS 450 TYP. MAX. UNIT CONDITIONS. V VGS=0V Reverse Drain-Source
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ZCN0545A
500mA,
250mA,
DMOSFET
ZCN0545A
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HIP4080 amplifier circuit diagram class D
Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
HIP4080 amplifier circuit diagram class D
class d amplifier schematic hip4080
jfet normally off to220
mosfet L 3055
HIP4080
ITL5-1
dual jfet transistor array
AN9404
oscilloscope schematic EAS 200
Switching Power supply with HIP4080A
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Simple PSpice Models Let You Simulate Common Battery
Abstract: 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor
Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.
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5M994-N
Simple PSpice Models Let You Simulate Common Battery
220 microfarad 12v capacitor
inductors 33 micro henry
transistor 2S D 716
inductors 10 micro henry
330 micro henry
MEPCO electra
104 TANTALUM capacitor
Cer cap 100uf
4600 fet transistor
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factors on which internal internal resistance of a cell depends experiment
Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.
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5M994-N
factors on which internal internal resistance of a cell depends experiment
Simple PSpice Models Let You Simulate Common Battery
104 TANTALUM capacitor nec
capacitor 220 microfarad A 16V
avx taj
MOSFET 2906
100NS
LTC1154
22UF
47UH
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A4950
Abstract: No abstract text available
Text: A4950 Full-Bridge DMOS PWM Motor Driver Description Features and Benefits • Low RDS on outputs • Overcurrent protection (OCP) ▫ Motor short protection ▫ Motor lead short to ground protection ▫ Motor lead short to battery protection • Low Power Standby mode
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A4950
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ISSUE 2 - M A Y 94 _ This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FE A TU R E S * E x tre m e ly lo w on state v o lta g e * N o ne ed to d e ra te fo r h ig h e r te m p e ra tu re s
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OCR Scan
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001G35S
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Untitled
Abstract: No abstract text available
Text: 1998 • SHORT FORM CATALOG - Revision SENSITRON SEMICONDUCTOR SHD23401 - 60 Volt - Similar to Industry Standard TN0606-001 SHD274002 -100 Volt - Similar to Industry Standard TN2510-002 QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs Features: • • •
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SHD23401
TN0606-001
SHD274002
TN2510-002
CERDIP-14
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SD400
Abstract: SD400BD SD402 SD402BD XSD400 XSD402
Text: SD400 / SD402 CALOGIC CORP lfll443S2 000024^ L m C G C MAE D caloric High-Speed Analog N-Channel/Enhancement-Mode DMOSFETS CORPORATION \J SD400/SD402 T - 3 5 - 2 . 5 FEATURES DESCRIPTION • • • • The SD400 and SD402 are N-Channel Enhancement Mode devices processed utilizing Calogics proprietary high speed,
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M43S2
SD400/SD402
SD400
SD402
SD400BD
SD402BD
XSD400
XSD402
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HA202
Abstract: No abstract text available
Text: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS SD200/SD201 /SD202/SD203/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz
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SD200/SD201
/SD202/SD203/SSTSD201
/SSTSD203
SD202,
SD203,
SSTSD203)
SD200
HA202
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Untitled
Abstract: No abstract text available
Text: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS calocflc CORPORATION v SD200/SD201 /SD202/SD2Û3/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz
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SD200/SD201
/SD202/SD2Ã
3/SSTSD201
/SSTSD203
SD202,
SD203,
SSTSD203)
SD200
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Untitled
Abstract: No abstract text available
Text: High-Speed Analog N-Channel/Enhancement-Mode DMOSFETS calocflc CORPORATION SD400/SD402 FEATURES • • • • DESCRIPTION Fast switching. ton <1ns Low capacitance. Crss 0.3 pF typ
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SD400/SD402
SD400
SD402
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Untitled
Abstract: No abstract text available
Text: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.
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TN2640
TN2640LG
TN2640N3
TN2640ND
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to 206af
Abstract: to-206af sd210 206af SD214 rings To206AF
Text: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical
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SD210
SD211
SD212
SD213
SD214
SD215
Isolation--120dB
Drivers--SD210,
SD211
Switches--SD214,
to 206af
to-206af
206af
rings
To206AF
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