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    BUZ11 Price and Stock

    onsemi BUZ11-NR4941

    MOSFET N-CH 50V 30A TO220-3
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    DigiKey BUZ11-NR4941 Tube 6,014 1
    • 1 $1.15
    • 10 $1.15
    • 100 $0.729
    • 1000 $0.50335
    • 10000 $0.43045
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    Mouser Electronics BUZ11-NR4941 2,510
    • 1 $1.15
    • 10 $0.898
    • 100 $0.725
    • 1000 $0.491
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    TME BUZ11-NR4941 1
    • 1 $1.149
    • 10 $0.848
    • 100 $0.637
    • 1000 $0.559
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    New Advantage Corporation BUZ11-NR4941 300 1
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    • 1000 $0.8048
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    Rochester Electronics LLC BUZ111SLE3045A

    MOSFET N-CH 50V 80A TO263
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    DigiKey BUZ111SLE3045A Bulk 2,000 355
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    Rochester Electronics LLC BUZ111SL-E3045A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ111SL-E3045A Bulk 1,830 353
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    Rochester Electronics LLC BUZ111S

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ111S Bulk 353
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    Rochester Electronics LLC BUZ11S2537

    N CHANNEL ENHANCEMENT-MODE TRANS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ11S2537 Bulk 606
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    Find more BUZ11 price and stock on Findchips.com

    BUZ11 Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUZ11 Fairchild Semiconductor TRANS MOSFET N-CH 50V 30A 3TO-220AB Original PDF
    BUZ11 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    BUZ11 Intersil 30A, 50V, 0.040 ?, N-Channel Power MOSFET Original PDF
    BUZ11 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ11 Siemens SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ11 STMicroelectronics N-Channel 50V - 0.03Ohm - 33A TO-220 STripFET MOSFET Original PDF
    BUZ11 STMicroelectronics N-Channel 50 V-0.03 ohm-33 A TO-220 STripFET MOSFET Original PDF
    BUZ11 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    BUZ11 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ11 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    BUZ11 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    BUZ11 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 50V, 30A, Pkg Style TO-220AB Scan PDF
    BUZ11 Motorola Switchmode Datasheet Scan PDF
    BUZ11 Motorola European Master Selection Guide 1986 Scan PDF
    BUZ11 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ11 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ11 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUZ11 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ11 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ11 Unknown FET Data Book Scan PDF

    BUZ11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 BUZ11A

    BUZ111SL

    Abstract: Q67040-S4003-A2 SPP80N05
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05

    BUZ11

    Abstract: TB334
    Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


    Original     		PDF BUZ11 TA9771. BUZ11 TB334

    SPP80N05L

    Abstract: BUZ111SL Q67040-S4003-A2
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05L BUZ111SL Q67040-S4003-A2

    TA9771

    Abstract: BUZ11 TB334
    Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as


    Original     		PDF BUZ11 BUZ11 TA9771. TA9771 TB334

    buz11 equivalent

    Abstract: BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
    Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 buz11 equivalent BUZ11FI BUZ11 BUZ11 in electronic pulse schematic

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
    Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 -TO-220 175oC O-220 BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic datecode G1

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    BUZ11A

    Abstract: BUZ11
    Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF BUZ11A -220A 10peration BUZ11A BUZ11

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    BUZ11

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics


    OCR Scan     		PDF O-220AB BUZ11

    Untitled

    Abstract: No abstract text available
    Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF BUZ11 BUZ11FI BUZ11/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ11 -TO-220

    BUZ11 motorola

    Abstract: BUZ11 buz11a
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as


    OCR Scan     		PDF BUZ11 BUZ11A BUZ11 motorola buz11a

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    buz 11 bv

    Abstract: No abstract text available
    Text: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds


    OCR Scan     		PDF BUZ11 BUZ11 buz 11 bv

    buz11

    Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag
    Text: rz 7 SCS-THOMSON Ä 7# RKMilLifg «! BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS on Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A • . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT220 CC35701 buz11 motor control BUZ11 avalanche GC35620 airbag

    BUZ11S2FI

    Abstract: BUZ11S2 CT55
    Text: • o o a 'ib b o ? T - Z ^ W B U Z11S2 B U Z 1 1 S 2 FI S G S -T H O M S O N IŒ g ïÎ[]« Q O (g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS S 3QE G S-THOMSON TYPE Vqss BUZ11S2 BUZ11S2FI 60 V 60 V ^DS(on 0.04 fi 0.04 fi D 'd■ 30 A 20 A • VE R Y LOW ON-LOSSES


    OCR Scan     		PDF BUZ11S2 BUZ11S2FI BUZ11S2FI 500ms CT55

    BUZ11 motorola

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan     		PDF BUZ11 b3b725M BUZ11 motorola

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON œ y [ E J O T Q BUZ11 BUZ11FI * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss 50 V 50 V R dS(oii Id 0.04 Li 0.04 LI 36 A 20 A . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT22Û ISOWATT22Q ATT220 BUZ11/FI

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    BUZ11

    Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
    Text: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT220 BUZ11FI BUZ11/FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche

    c5353

    Abstract: Z11A
    Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY


    OCR Scan     		PDF BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40