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    IRFD010

    Abstract: T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A
    Text: HE D I 4055455 QQOÔBSb Ì | T-37-25 Data Sheet No. PD-9.464A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N-CHANNEL HEXDIP I O R IRFD0 1 0 IRFDOi 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.20 Ohm, 1-Watt HEXDIP


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    PDF T-37-25 IRFD010 C-110 T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A

    IRF123

    Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
    Text: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V


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    PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0

    Diode LT 442

    Abstract: Diode LT 443 IRFP441 IRFP440 ir 441 c IRFP443
    Text: IRF840/841/842/843 IRFP440/441/442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru g g e d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended sa le operating area


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    PDF IRF840/841/842/843 IRFP440/441/442/443 O-220 IRFP441 IRF840 IRFP440 IRF841 Diode LT 442 Diode LT 443 ir 441 c IRFP443