4C1M16E5
Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
Text: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time
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AS4LC1M16E5
42-pin
44/50-pin
AS4LC1M16E5)
4C1M16E5
AS4LC1M16E5-60TC
AS4LC1M16E5
4C1M1
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Untitled
Abstract: No abstract text available
Text: H igh Performance 1MX16 CMOS DRAM •■ II 4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0
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1MX16
AS4C1M16E0
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
AS4LC1M16E0
AS4LC1M16EO-70JC
42-pm
1M16E0
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16F5
Abstract: 4c1m16
Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh
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OCR Scan
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16E0-60)
ZDDQ15
ZDDQ11
ZDDQ10
A54C1M16FS
42-pin
-60JC
AS4C1M16F5-50JC
AS4C1M16F5
16F5
4c1m16
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4lc1m16e5-6
Abstract: No abstract text available
Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al
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16E5-60)
4LC1M16E5-60)
42-pin
AS4C1M16ES-50JC
AS4C1M16E5-60JC
AS4LC1M16E5-50TC
-60TC
42-pin
1M16E0
4lc1m16e5-6
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4LC1M16E5
Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh
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OCR Scan
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PDF
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AS4C1M16E5
AS4LC1M16E5
4C1M16E5-60)
4LC1M16E5-60)
42-pin
4C1M16E5)
44/50-pin
4LC1M16E5)
AS4C1M16E5)
AS4C1M16E5
4LC1M16E5
4C1M16E5
j13000
j130007a
1m16e
4C1M16E5-60
J1-30007-A
4lc1m16e5-60
AS4LC1M16E5
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Untitled
Abstract: No abstract text available
Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write
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OCR Scan
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PDF
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16E0-60)
42-pin
71pS4C
AS4C1M16E5-60JC
1M16E0
42-pin
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T835
Abstract: No abstract text available
Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e
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AS4C1M16E0
AS4LC1M16E0
16E0-60JC
I6E0-60JC
42-pin
16E0-70JC
IM16E0
T835
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4LC1M16
Abstract: 4C1M16 AS4CIM16 IS3015
Text: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ
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4C1M16EO-SO)
42-pin
4C1M16E0)
I/015
eiOG3441
AS4C1M16E0
AS4LC1M16E0
AS4C1M16E0-60JC
4LC1M16
4C1M16
AS4CIM16
IS3015
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Untitled
Abstract: No abstract text available
Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0
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AS4LC1M16EÃ
42-pin
4C1M16EO-SO)
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4C1M16
Abstract: 1MX16 4LC1M16
Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout
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OCR Scan
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PDF
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1MX16
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
6E0-50
4C1M16E0-60
6E0-70
AS4C1M16E0
4C1M16
4LC1M16
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AS4C1M16ES
Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh
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OCR Scan
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PDF
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AS4C1M16E5
1MX16
4C1M16E0-60)
42-pin
12S4C1M16E5
Capacitance15
42-pin
AS4C1M16E5-60JC
1M16E0
AS4C1M16ES
4C1M16E5
LR 3441
AS4C1M16E5
LMZ 9
4C1M16E5-60
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4LCIM16E5-50
Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000
Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout
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OCR Scan
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PDF
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42-pin
4C1M16E5)
50-pin
4LC1M16E5)
4C1M16E5-60)
4LC1M16E5-60)
AS4C1M16E5)
AS4LC1M16E5)
-60JC
16E5-50JC
4LCIM16E5-50
4LCIM16E5
4LC1M16E5
AS4LC1M16ES
j130007a
4C1M16E5-60
AS4CIM16E5
j13000
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Untitled
Abstract: No abstract text available
Text: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh
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