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    ZDDQ10 Search Results

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    Catalog Datasheet MFG & Type PDF Document Tags

    16F5

    Abstract: 4c1m16
    Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh


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    PDF 16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16

    MT4C16270DJ-7

    Abstract: No abstract text available
    Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


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    PDF MT4C16270 512-cycle MT4C16270DJ-7

    C1204B

    Abstract: t2g memory
    Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM416C1204BJ 16Bit C1204B t2g memory

    16v1204

    Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
    Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM416V1204BJ 1Mx16Bit 1Mx16 Q323tà 5CK44 -TSOP2-400R 825-ooc 35-q1q 003b2b0 16v1204 C1204B KM416V1204BJ 74142 74142 NOTE

    C1204B

    Abstract: No abstract text available
    Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM416C1204BT 16Bit 1Mx16 03042b C1204B

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF 256Kx16 KM416V256DJ 0G322tM QG322bS 7Tb4142 00322bfci