ZDDQ11 Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
16F5 Abstract: 4c1m16 Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh	OCR Scan	16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16	PDF
16C256 Abstract: KM416C256DJ Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	1C256D 256Kx16 40SOJ KM416C256DJ 16C256 KM416C256DJ	PDF
Untitled Abstract: No abstract text available Text: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	256Kx16 16C256DJ 40SOJ KM416C256DJ 7Rb414H	PDF
31DQ8 Abstract: 31DQ14 3DA10 31DQ12 Text: KM416C4004B, KM416C4104 B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this	OCR Scan	KM416C4004B, KM416C4104 16bit 4Mx16 KM416C4004B KM416C4104B tAsc26ns, tRASS2l00u8, 31DQ8 31DQ14 3DA10 31DQ12	PDF
4mx16 edo Abstract: No abstract text available Text: KM416V4Q04B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power corvsumption{Normal	OCR Scan	KM416V4Q04B, KM416V4104B 16bit 4Mx16 4mx16 edo	PDF
Untitled Abstract: No abstract text available Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	256Kx16 KM416V256DJ 0G322tM QG322bS 7Tb4142 00322bfci	PDF