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Micron Technology Inc MT4LC1M16E5TG-6
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Bristol Electronics	MT4LC1M16E5TG-6		410			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MT4LC1M16E5TG-6		51		1	1 $6.72 10 $4.368 100 $3.1362 1000 $3.1362 10000 $3.1362	Buy Now
Micron Technology Inc MT4LC1M16E5-DJ-6Z
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Bristol Electronics	MT4LC1M16E5-DJ-6Z		388			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc MT4LC1M16E5TG-6
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Bristol Electronics	MT4LC1M16E5TG-6		157			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alliance Semiconductor Corporation AS4LC1M16ES-60JC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AS4LC1M16ES-60JC		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4LC1M16E5TG6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4LC1M16E5TG6		45			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MT4LC1M16E5TG6		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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4LC1M16 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
4LC1M16C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

4LC1M16 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NEC D2732 Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256	Original	71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732	PDF
4LC1M16C3 Abstract: No abstract text available Text: M i r n I r i M m t 4 L C 1 m i 6 C 3 L "• ■■ — 1 M E G X 16 D R A M DRAM 1 MEG x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry -stan d ard x1 6 tim ing , fu nctions, p in o u ts and p ackages	OCR Scan	024-cy T1995 M16C3 MT4IC1M16C3 4LC1M16C3	PDF
Untitled Abstract: No abstract text available Text: H ish Performance' •■ AS4LC 1 M I 6 S 0 A 1M X I 6 C M O S D RA M I M x 16 S y n c hr on o us D I M M Advance information Features • Organization: 524,288 w ords x 16 bits x 2 banks * Can assert random column address in every cycle • All signals referenced to positive edge o f clock	OCR Scan	44-pin AS4LC1M16S0 Q00CHb2	PDF
4lc1m16e5-6 Abstract: No abstract text available Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al	OCR Scan	16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6	PDF
4LC1M16E5 Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5 Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh	OCR Scan	AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5	PDF
T835 Abstract: No abstract text available Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e	OCR Scan	AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835	PDF
4LC1M16C3 Abstract: No abstract text available Text: 4LC1M16C3 L 1 MEG X 16 DRAM MICRON DRAM 1 M E G x 1 6 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +3.3V +0.3V power supply	OCR Scan	MT4LC1M16C3 024-cycle 250mW 12/9S 4LC1M16C3	PDF
4LC1M16 Abstract: 4C1M16 AS4CIM16 IS3015 Text: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ	OCR Scan	4C1M16EO-SO) 42-pin 4C1M16E0) I/015 eiOG3441 AS4C1M16E0 AS4LC1M16E0 AS4C1M16E0-60JC 4LC1M16 4C1M16 AS4CIM16 IS3015	PDF
Untitled Abstract: No abstract text available Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0	OCR Scan	AS4LC1M16EÃ 42-pin 4C1M16EO-SO)	PDF
4C1M16 Abstract: 1MX16 4LC1M16 Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout	OCR Scan	1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16	PDF
Untitled Abstract: No abstract text available Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0	OCR Scan	1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0	PDF
4LCIM16E5-50 Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000 Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	OCR Scan	42-pin 4C1M16E5) 50-pin 4LC1M16E5) 4C1M16E5-60) 4LC1M16E5-60) AS4C1M16E5) AS4LC1M16E5) -60JC 16E5-50JC 4LCIM16E5-50 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000	PDF