C1000B
Abstract: 3020C
Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416C1000BT
16Bit
1Mx16
7Tb4142
DD3D23b
C1000B
3020C
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16F5
Abstract: 4c1m16
Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh
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16E0-60)
ZDDQ15
ZDDQ11
ZDDQ10
A54C1M16FS
42-pin
-60JC
AS4C1M16F5-50JC
AS4C1M16F5
16F5
4c1m16
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16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
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Untitled
Abstract: No abstract text available
Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BJ
1Mx16
DD302t4
D0302bS
Q03D2bb
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UD322
Abstract: H14E AA-322 D322B
Text: KM416V256DT CMOS D RA M ELECTRONICS 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM416V256DT
256Kx16
JU004
7Tb4142
UD322
H14E
AA-322
D322B
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