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    Abstract: No abstract text available
    Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write


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    PDF 16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin