Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CAPACITANCE15 Search Results

    CAPACITANCE15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A416316B

    Abstract: No abstract text available
    Text: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0


    Original     		PDF A416316B 400mil, 40-pin

    A426316B

    Abstract: A426316BS A426316BV
    Text: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0


    Original     		PDF A426316B 400mil, 40-pin A426316BS A426316BV

    A416316AS-40

    Abstract: No abstract text available
    Text: A416316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 7, 1999 Preliminary 0.1 Change ICC7 test condition from “all other input high levels


    Original     		PDF A416316A A416316AS-40

    A416316S-40

    Abstract: AT7370
    Text: A416316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 06, 1998 Preliminary 0.1 Modify 40/44L TSOP type II package outline drawing and


    Original     		PDF A416316 40/44L 40/44L A416316S-40 AT7370

    edo ram

    Abstract: No abstract text available
    Text: A426316 Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 Preliminary History Issue Date Remark Initial issue October 20, 1998 Preliminary October, 1998, Version 0.0


    Original     		PDF A426316 160mA edo ram

    A72Pq

    Abstract: VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265
    Text: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3


    Original     		PDF FC102 15bis A72Pq VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265

    XC167CI

    Abstract: XC164CM C166 C166SV2 SAK-XC167CI-32F20F SAK-XC167CI-32F40F XC166 XC167 XC167CI-32 XC167CI-32F
    Text: Data Sheet, V1.1, Aug. 2006 XC167CI-32F 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer


    Original     		PDF XC167CI-32F 16-Bit C166SV2 XC167 XC167, XC167CI XC164CM C166 SAK-XC167CI-32F20F SAK-XC167CI-32F40F XC166 XC167CI-32 XC167CI-32F

    Untitled

    Abstract: No abstract text available
    Text: A416316B Series 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue November 15, 2000 Preliminary 1.0 Final version release September 29, 2003


    Original     		PDF A416316B A416316B-L

    Untitled

    Abstract: No abstract text available
    Text: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O


    OCR Scan     		PDF 24/26-pin 24/26-p E0-60JC AS4LC4M4E0-50TC AS4LC4M4E0-60TC U-30004-A.

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
    Text: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin CY7C4261 CY7C4271 CY7C4271-15LMB IDT72201 n25l

    Untitled

    Abstract: No abstract text available
    Text: BURR-BROW N w m m DAC8043 M CMOS 12-Bit Serial Input Mulitplying DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • 12-BIT ACCURACY IN 8-PIN MINI-DIP AND 8-PIN SOIC • FAST 3-WIRE SERIAL INTERFACE • AUTOMATIC CALIBRATION • MOTION CONTROL • LOW INL AND DNL: ±1/2 LSB max


    OCR Scan     		PDF DAC8043 12-Bit DAC8043 5M-1982.

    Untitled

    Abstract: No abstract text available
    Text: DAC8012 B U R R -B R O W N I 1 SP* CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTER With Memory FEATURES • • • • • • • • i n p u t d a t a is lo a d e d i n t o th e D A C a s a 1 2 -b it d a t a w o r d . T h e d a t a is lo a d e d i n t o t h e D A C f r o m th e b u s


    OCR Scan     		PDF DAC8012 12-Bit

    Untitled

    Abstract: No abstract text available
    Text: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R /W RAM Features Functional Description • High speed - U à = 25 ns T he CY7C106 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C106 CY7C106

    ATA 2388

    Abstract: No abstract text available
    Text: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable


    OCR Scan     		PDF CY7B193 CY7B193 ATA 2388

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 60mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 80ns No secondary breakdown 15.0+0.3 11 . 0 + 0.2


    OCR Scan     		PDF 2SK1803 capacitance155'

    ga1000

    Abstract: No abstract text available
    Text: s CO M PU TIN G AND e m I c o n D U S1 T 0 R , I N C NETW ORKING Figure 1. Block Diagram FBIN C C LK SO NC NC GN D GA1086 11-Output Clock Buffer Features * Operates from 30 MHz to 67 MHz a Pin-to-pin output skew of 250ps max * Period-to-period jitter: 75 ps (typ)


    OCR Scan     		PDF GA1086 11-Output 250ps -350ps 500ps -350ps A1086 ga1000

    Untitled

    Abstract: No abstract text available
    Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write


    OCR Scan     		PDF S4C14405 26/20-pin AS4C14405-60JC 26/20-pin 0Q34HC

    Untitled

    Abstract: No abstract text available
    Text: H igh Perform ance 2M x8 CMOS DRAM II ; AS4C2M8E0 AS4T.C2M8E0 II 2M X 8 CMOS EDO DRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its • R e a d - m o d ify -w r ite • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s ta te 1 / O


    OCR Scan     		PDF AS4LC2M8E0-60JC AS4-C2M8E0-60JC AS4LC2M8E0-70

    IMS1403P-55

    Abstract: B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35
    Text: IMS1403 CMOS High Performance 16K x 1 Static RAM o^m os1 D E S C R IP T IO N FEATURES • • • • • • • • • • • The INMOS 1MS1403 is a high performance 16K x 1 CMOS Static RAM. The IMS1403 provides maximum density and speed enhancements with the additional


    OCR Scan     		PDF IMS1403 20-Pin, 300-mil 20-Pin 1MS1403 IMS1403 IMS1403P-55 B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35

    Untitled

    Abstract: No abstract text available
    Text: C*yppucc CY7B163 Expandable 262,144 x 1 Static R/W RAM with Separate I/O ADVANCED INFORMATION SEMICONDUCTOR Features • High speed - 12 ns • Five chip enables C E |, j ,j and CE4,5 to expand memory • BiCMOS for optimum speed/power • Low active power


    OCR Scan     		PDF CY7B163 CCY7B163-20VC CY7B163-20DC CY7B163-20LC CY7B163-20DMB CY7B163-20LMB CY7B163

    7B154

    Abstract: No abstract text available
    Text: CY7B153 CY7B154 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Expandable 65,536 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7B 153 a n d C Y 7 B 1 5 4 a rc h ig h -p e r­ fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz e d


    OCR Scan     		PDF CY7B153 CY7B154 7B154 7B153

    Z3CS

    Abstract: 32TSOP
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V


    OCR Scan     		PDF KM68V1000C, KM68U1000C 128KX8 KM68V1000C KM68U1OOOC 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-OB13 KM68U1Q00C Z3CS 32TSOP

    la 76805 volt on pin

    Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
    Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4


    OCR Scan     		PDF MCS-4/40â MCS-48â MCS-80/85â -883B la 76805 volt on pin intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall

    Untitled

    Abstract: No abstract text available
    Text: CYM1421 -128K x 8 Static RAM Module CYPRESS •— SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module The CYM1421 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. The module is constructed using four 32K * 8 static


    OCR Scan     		PDF 32-pin, CYM1421 ----128K CYM1421 CYM1421HD-70C CYM1421LHD-70C CYM1421HD-85C CYM1421LHD-85C 38-M-00002-A