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Tripp Lite N846D-01M-16EMG FIBER OPTIC CBL LC-MTP MULT 1M
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DigiKey	N846D-01M-16EMG	Bulk	1		1	1 $227.1 10 $185.176 100 $227.1 1000 $227.1 10000 $227.1	Buy Now
Mouser Electronics	N846D-01M-16EMG					1 $178.54 10 $178.53 100 $178.53 1000 $178.53 10000 $178.53	Get Quote
Newark	N846D-01M-16EMG	Bulk			10	1 - 10 $241.39 100 $214.25 1000 $214.25 10000 $214.25	Buy Now
RS	N846D-01M-16EMG	Bulk	1	2 Weeks	1	1 $236.18 10 $212.57 100 $203.12 1000 $203.12 10000 $203.12	Buy Now
Master Electronics	N846D-01M-16EMG					1 $204.04 10 $195 100 $190.44 1000 $190.44 10000 $190.44	Buy Now

Neutron USA	N846D-01M-16EMG		38			1 $239.99 10 $239.99 100 $239.99 1000 $239.99 10000 $239.99	Buy Now
Jacob GmbH 101011M16ES WADI CABLE GLAND METRIC - STAINL
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DigiKey	101011M16ES	Bag			50	1 - 10 - 100 $22.7996 1000 $22.7996 10000 $22.7996	Buy Now
Integrated Silicon Solution Inc IS66WV1M16EBLL-70BLI IC PSRAM 16MBIT PARALLEL 48TFBGA
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DigiKey	IS66WV1M16EBLL-70BLI	Tray			480	1 - 10 - 100 - 1000 $2.88006 10000 $2.88006	Buy Now
Avnet Americas	IS66WV1M16EBLL-70BLI	Tray	480	10 Weeks	1	1 $2.23126 10 $2.17876 100 $2.02125 1000 $2.02125 10000 $2.02125	Buy Now
Mouser Electronics	IS66WV1M16EBLL-70BLI		1,235			1 $3.67 10 $3.33 100 $2.91 1000 $2.65 10000 $2.52	Buy Now
Newark	IS66WV1M16EBLL-70BLI	Bulk	480		1	1 $2.24 10 $2.18 100 $2.03 1000 $2.03 10000 $2.03	Buy Now
	IS66WV1M16EBLL-70BLI	Bulk			480	1 $3 10 $3 100 $3 1000 $3 10000 $3	Buy Now
Bristol Electronics	IS66WV1M16EBLL-70BLI		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Asia	IS66WV1M16EBLL-70BLI			12 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS66WV1M16EBLL-70BLI			14 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Integrated Silicon Solution Inc IS66WV1M16EBLL-55BLI IC PSRAM 16MBIT PARALLEL 48TFBGA
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DigiKey	IS66WV1M16EBLL-55BLI	Tray			480	1 - 10 - 100 - 1000 $3.20923 10000 $3.20923	Buy Now
Avnet Americas	IS66WV1M16EBLL-55BLI	Bulk		10 Weeks	480	1 - 10 - 100 - 1000 $2.63094 10000 $2.522	Buy Now
Mouser Electronics	IS66WV1M16EBLL-55BLI					1 - 10 - 100 - 1000 $2.89 10000 $2.89	Get Quote
Newark	IS66WV1M16EBLL-55BLI	Bulk			480	1 - 10 - 100 - 1000 $2.6 10000 $2.6	Buy Now
Avnet Silica	IS66WV1M16EBLL-55BLI			14 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI IC PSRAM 16MBIT PARALLEL 48TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS66WVE1M16EBLL-70BLI	Tray			480	1 - 10 - 100 - 1000 $2.63321 10000 $2.63321	Buy Now
Avnet Americas	IS66WVE1M16EBLL-70BLI	Bulk		10 Weeks	480	1 - 10 - 100 - 1000 $2.62995 10000 $2.0661	Buy Now
Mouser Electronics	IS66WVE1M16EBLL-70BLI		80			1 $3.36 10 $3.06 100 $2.67 1000 $2.45 10000 $2.38	Buy Now
Newark	IS66WVE1M16EBLL-70BLI	Bulk			480	1 - 10 - 100 - 1000 $2.13 10000 $2.13	Buy Now
Avnet Asia	IS66WVE1M16EBLL-70BLI			10 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	IS66WVE1M16EBLL-70BLI			14 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IS66WVE1M16EBLL-70BLI		64		1	1 - 10 - 100 $3.35 1000 $3.35 10000 $3.35	Buy Now

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1M16E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AS4C1M16F5-60JC Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (1M16E0-60)	Original	AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 42-pin AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60tc	PDF
as4c1m16e5-60jc Abstract: as4c1m16e5-50jc Text: $6&0 $XJXVW 9 0î &026 '5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ	Original	42-pin 44/50-pin AS4C1M16E5-60) as4c1m16e5-60jc as4c1m16e5-50jc	PDF
as4c1m16e5 Abstract: AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc Text: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 16 bits • High speed - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	Original	AS4C1M16E5 42-pin 44/50-pin AS4C1M16E5) AS4LC1M16E5) AS4C1M16E5-60) as4c1m16e5 AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc	PDF
AS4LC1M16E5 Abstract: AS4LC1M16E5-50JC Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5 AS4LC1M16E5-50JC	PDF
AS4LC1M16E5-60TC Abstract: No abstract text available Text: $6/&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time	Original	42-pin 44/50-pin AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) AS4LC1M16E5-50JC AS4LC1M16E5-50JI AS4LC1M16E5-50TC AS4LC1M16E5-60TC	PDF
Untitled Abstract: No abstract text available Text: 3UHOLPLQDU\LQIRUPDWLRQ $6&0 90ð&026'5$0 IDVWSDJHPRGH )HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ	Original	42-pin 44/50-pin AS4C1M16E0-60) AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC AS4C1M16F5-50TI AS4C1M16F5-60JC	PDF
4C1M16E5 Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1	PDF
1m16e Abstract: No abstract text available Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (1M16E0-60)	Original	AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC 1m16e	PDF
as4c1m16e5-60jc Abstract: as4c1m16e5 AS4C1M16E5-45JC Text: $6&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time	Original	42-pin 44/50-pin AS4C1M16E5-60) AS4C1M16E5) AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) AS4C1M16E5-45JC as4c1m16e5-60jc as4c1m16e5	PDF
Untitled Abstract: No abstract text available Text: $GYDQFHLQIRUPDWLRQ $66&0 90ð&026,QWHOOLZDWW'5$0 ('2 HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh • Read-modify-write	Original	42-pin 44/50-pin 1DQ15 AS4SC1M16E5-100JC AS4SC1M16E5-100TC 1M16E5	PDF
AS4LC1M16E5-60TC Abstract: AS4LC1M16E5 AS4LC1M16E5-60JC Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5-60TC AS4LC1M16E5 AS4LC1M16E5-60JC	PDF
4lc1m16e5-6 Abstract: No abstract text available Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al	OCR Scan	16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6	PDF
4LC1M16E5 Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5 Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh	OCR Scan	AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5	PDF
Untitled Abstract: No abstract text available Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write	OCR Scan	16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin	PDF

Untitled Abstract: No abstract text available Text: Preliminary information •■ I l 1M16E5 1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e	OCR Scan	AS4C1M16E5 AS4LC1M16E5 42-pin /50-p 6E5-60) AS4C1M16ion. AS4LC1M16E5 44/50-pin 16E5-45TCAS4LC1M	PDF
RR 113001 Abstract: 1M16E5 Text: Advance information •■ 1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write	OCR Scan	AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-100JC AS4VC1M16E5-100TC 1M16E5 RR 113001 1M16E5	PDF
Untitled Abstract: No abstract text available Text: Preliminary information •■ AS4C1M16F5 II 5V 1M x 16 C M O S DRAM fast page mode Features • O rganization: 1,048 ,5 7 6 w ords • H igh speed X • 1024 refresh cycles, 16 m s refresh interval 16 bits - K A S -o n ly o r C A S -b e fo r e -K A S r e f r e s h	OCR Scan	AS4C1M16F5 42-pin AS4C1M16F5-50JC AS4C1M16F5-60JC 1M16E0	PDF
G1117S Abstract: MT4LC1M165 Text: ADVANCE ft 1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44	OCR Scan	MT4LC1M16E5 024-cycle 225mW 44/50-Pin MT4lCtMt6E54S) L111S41 G1117S MT4LC1M165	PDF
Untitled Abstract: No abstract text available Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0	OCR Scan	AS4LC1M16EÃ 42-pin 4C1M16EO-SO)	PDF
Untitled Abstract: No abstract text available Text: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ	OCR Scan	1-30004-A. 1M16E0 l-30004-A.	PDF
Untitled Abstract: No abstract text available Text: A 1M16E5 3V 1Mx 16 CMOS DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • High speed •TTL-com patible, three-state DQ ■JEDEC standard package and pinout - 5 0 / 6 0 ns RAS access time - 2 0 /2 5 ns hyper page cycle time - 1 2 /1 5 ns CAS access time	OCR Scan	42-pin AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) M16E5 42-pin AS4LC-1M16E5-50JCAS4LC-1M 16E5-50JI AS4LC1M16E5-60JC AS4LC1M16E5-60JI	PDF
4C1M16 Abstract: 1MX16 4LC1M16 Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout	OCR Scan	1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16	PDF
AS4C1M16ES Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60 Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh	OCR Scan	AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60	PDF
Untitled Abstract: No abstract text available Text: H igh Performance 1MX16 CMOS DRAM •■ II 1M16E0 1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 1M16E0	OCR Scan	1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0	PDF

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1M16E Search Results

1M16E Price and Stock

Tripp Lite N846D-01M-16EMG

Jacob GmbH 101011M16ES

Integrated Silicon Solution Inc IS66WV1M16EBLL-70BLI

Integrated Silicon Solution Inc IS66WV1M16EBLL-55BLI

Integrated Silicon Solution Inc IS66WVE1M16EBLL-70BLI

1M16E Datasheets Context Search

AS4C1M16F5-60JC

as4c1m16e5-60jc

as4c1m16e5

AS4LC1M16E5

AS4LC1M16E5-60TC

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4C1M16E5

1m16e

as4c1m16e5-60jc

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AS4LC1M16E5-60TC

4lc1m16e5-6

4LC1M16E5

Untitled

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RR 113001

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G1117S

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4C1M16

AS4C1M16ES

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