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    440166 Price and Stock

    Molex 0190440166

    RING KRIMPTITE (B-130-10HD)
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    OMRON Industrial Automation CCS-QBR-144016-66

    CCS LIGHTING ACCESSORIES
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    PRECI-DIP SSA 310-87-144-01-666101

    CONN SOCKET 44POS 0.1 GOLD PCB
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    PRECI-DIP SSA 350-80-144-01-666101

    CONN HEADER VERT 44POS 2.54MM
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    PRECI-DIP SSA 350-10-144-01-666101

    CONN HEADER VERT 44POS 2.54MM
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    440166 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Subminiature and Microminiature D Connectors Stacked Connectors AMP 1-440166-1 Active Active Not Reviewed for ELV/RoHS Compliance Tyco Electronics P/N: 1-440166-1


    Original     		PDF

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band


    Original     		PDF CGHV40030 CGHV40030 CGHV40

    Untitled

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    ATC600S

    Abstract: AVX0805 AVX1206 CRF35010
    Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has


    Original     		PDF CRF35010F CRF35010 CRF350 CRF35010F ATC600S AVX0805 AVX1206

    Cree Microwave

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF

    STR F 6168

    Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025-TB j326 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    RO4350

    Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 RO4350 RO4350B transistor 0882 docsis V 8623 transistor 32QAM 2J302 CGH5501 CGH55015

    PAR ofdm

    Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
    Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH27030F CGH27030F CGH2703 PAR ofdm CGH27030 CGH27030-TB RO4350B 10UF 470PF str f 3626

    Untitled

    Abstract: No abstract text available
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    str w 6554 a

    Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6554 a str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a

    CGH27015-TB

    Abstract: CGH27015 CGH27015F JESD22
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F

    transistor 8772

    Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: - 39.00i0.15-33.32 ±0.1 524.8 + 0.15 -6.00 + 0 .2 5 $ 4 —40 UNC 2 PLC -AMP LOGO ^ 0 .2 5 + 0 .2 1 —3.80 + 0.41 2 PLC CROPHONE AUDIO OUT 3.1 8 + 0.38—1 3.1 8 + 0.38 ^ 20 PLC 15 PLC 1 .1 7 + 0.03 15 PLC 03.2O+OJO PCB TOLERANCE: 0 - 12: ± 0.10 12- : ±0.15


    OCR Scan     		PDF