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    CGH35030F Price and Stock

    MACOM CGH35030F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35030F Tray 15 1
    • 1 $127.27
    • 10 $103.857
    • 100 $103.857
    • 1000 $103.857
    • 10000 $103.857
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    CGH35030F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH35030F Cree 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original PDF

    CGH35030F Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503

    A 12-15 GHz High Gain Amplifier

    Abstract: HEADER RT
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT

    transistor 8772

    Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22

    transistor 8772

    Abstract: Transistor C 4927 8772 transistor CGH35030F
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor

    RO4350B

    Abstract: CGH35030F CGH35030-TB 10UF 470PF
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 RO4350B CGH35030-TB 10UF 470PF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503

    STR 5709

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 STR 5709

    str 6754

    Abstract: ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030F CGH35030-TB
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original
    PDF CGH35030F CGH35030F CGH3503 str 6754 ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030-TB

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


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    PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


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