Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH55030F1 Search Results

    SF Impression Pixel

    CGH55030F1 Price and Stock

    MACOM CGH55030F1

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030F1 Tray 1
    • 1 $183.21
    • 10 $152.393
    • 100 $150.4376
    • 1000 $150.4376
    • 10000 $150.4376
    		Buy Now
    Mouser Electronics CGH55030F1
    • 1 $161.41
    • 10 $143.4
    • 100 $139.6
    • 1000 $139.6
    • 10000 $139.6
    		Get Quote

    CGH55030F1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGH55030F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166 Original PDF

    CGH55030F1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B