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MACOM CGH40025F RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40025F	Tray	482		1	1 $133.12 10 $133.12 100 $133.12 1000 $133.12 10000 $133.12	Buy Now
Mouser Electronics	CGH40025F		438			1 $151.71 10 $143.33 100 $143.33 1000 $143.33 10000 $143.33	Buy Now
Richardson RFPD	CGH40025F		119		1	1 $251.2 10 $251.2 100 $251.2 1000 $251.2 10000 $251.2	Buy Now
MACOM CGH40025F-AMP CGH40025F DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40025F-AMP	Box	3		1	1 $799.82 10 $799.82 100 $799.82 1000 $799.82 10000 $799.82	Buy Now
Mouser Electronics	CGH40025F-AMP		2			1 $783.57 10 $783.57 100 $783.57 1000 $783.57 10000 $783.57	Buy Now
Richardson RFPD	CGH40025F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Cree, Inc. CGH40025F RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM NITRIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	CGH40025F		1			1 $116.025 10 $116.025 100 $116.025 1000 $116.025 10000 $116.025	Buy Now
MACOM CGH40025F-TB RF TRANSISTOR TEST FIXTURE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH40025F-TB		2		1	1 $400 10 $400 100 $400 1000 $400 10000 $400	Buy Now
MACOM CGH40025F-SW1 RF FRONT END REFERENCE DESIGNS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH40025F-SW1				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CGH40025F Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH40025F		Cree	RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG		Original	PDF
CGH40025F		Cree	25 W, RF Power GaN HEMT		Original	PDF
CGH40025F-AMP		Wolfspeed	CGH40025F DEV BOARD WITH HEMT		Original	PDF
CGH40025F-AMP		Wolfspeed	CGH40025F DEV BOARD WITH HEMT		Original	PDF
CGH40025F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025		Original	PDF

CGH40025F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
str w 6556 a Abstract: str w 6556 str 6556 str 6708 STR 6553 CGH40025F CGH40025 str F 6256 CW 7805 str 6556 a Text: PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40025F CGH40025 CGH40025, CGH4002 str w 6556 a str w 6556 str 6556 str 6708 STR 6553 CGH40025F str F 6256 CW 7805 str 6556 a	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
STR F 6168 Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025-TB j326 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p	PDF
Untitled Abstract: No abstract text available Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F	PDF
str w 6554 a Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025 Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6554 a str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a	PDF
transistor c3909 Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor	PDF
CGH55030F2 Abstract: No abstract text available Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2	PDF
CGH55030F2 Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE	PDF
on 5295 transistor Abstract: CGH27030 CGH27030F CGH27030-TB CGH40025F JESD22 Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	CGH27030 CGH27030 CGH2703 27030F CGH27030F on 5295 transistor CGH27030-TB CGH40025F JESD22	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
STR F 6168 Abstract: CGH40025 40025F CGH40025P CGH40025F CGH40025-TB Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 40025F CGH40025P CGH40025F CGH40025-TB	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx	PDF
STR F 6168 Abstract: CGH40025F CGH40025-TB CGH40025 JESD22 Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025F CGH40025-TB JESD22	PDF
STR F 6168 31 v power Abstract: STR F 6168 CGH40025P CGH40025 CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31 Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 31 v power STR F 6168 CGH40025P CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31	PDF

str w 6556 Abstract: str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025 CGH40025F str 6708 Text: PRELIMINARY CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain	Original	CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6556 str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025F str 6708	PDF
CGH55030P2 Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22 Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22	PDF
ATC600L Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55	PDF
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original		PDF