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    CGH55030 Search Results

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    CGH55030 Price and Stock

    MACOM CGH55030F1

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030F1 Tray 21 1
    • 1 $181.39
    • 10 $150.884
    • 100 $181.39
    • 1000 $181.39
    • 10000 $181.39
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    Mouser Electronics CGH55030F1
    • 1 $177.31
    • 10 $152.39
    • 100 $152.39
    • 1000 $152.39
    • 10000 $152.39
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    MACOM CGH55030P2

    FET RF HEMT 6GHZ 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030P2 50
    • 1 -
    • 10 -
    • 100 $121.55
    • 1000 $121.55
    • 10000 $121.55
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    Richardson RFPD CGH55030P2 7 1
    • 1 $81.66
    • 10 $81.66
    • 100 $81.66
    • 1000 $81.66
    • 10000 $81.66
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    MACOM CGH55030F2-AMP

    CGH55030F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030F2-AMP Box 2
    • 1 -
    • 10 $749.8
    • 100 $749.8
    • 1000 $749.8
    • 10000 $749.8
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    Richardson RFPD CGH55030F2-AMP 1
    • 1 -
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    TT Electronics Resistors CGH5503003F

    Resistor, High Voltage Thick Film, 300Kohm, 5W, 1%; Resistance:300Kohm; Product Range:Cgh Series; Power Rating:5W; Resistance Tolerance:± 1%; Resistor Case/Package:Axial Leaded; Voltage Rating:20Kv; Resistor Technology:Thick Film Rohs Compliant: No |Tt Electronics/international Resistive CGH5503003F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark CGH5503003F Bulk 100
    • 1 -
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    Onlinecomponents.com CGH5503003F 169
    • 1 $53.54
    • 10 $51.48
    • 100 $47.59
    • 1000 $47.59
    • 10000 $47.59
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    Master Electronics CGH5503003F
    • 1 $53.54
    • 10 $51.48
    • 100 $47.59
    • 1000 $47.59
    • 10000 $47.59
    		Buy Now

    CGH55030 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH55030F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166 Original PDF
    CGH55030F2 Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 440166 Original PDF
    CGH55030F2-AMP Wolfspeed CGH55030F2 DEV BOARD WITH HEMT Original PDF
    CGH55030F2-AMP Wolfspeed CGH55030F2 DEV BOARD WITH HEMT Original PDF
    CGH55030F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL HEMT AMPLIFIER Original PDF

    CGH55030 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L PDF

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM PDF

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		CGH55030F CGH55030F CGH5503 PDF

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 PDF

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE PDF

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB PDF

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B PDF

    hemt .s2p

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 hemt .s2p PDF

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 PDF

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 PDF

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F PDF

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original     		000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR PDF