CGH55015F1 Search Results

CGH55015F1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
CGH55015F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196		Original	PDF

CGH55015F1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RO4350 Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015 Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 RO4350 RO4350B transistor 0882 docsis V 8623 transistor 32QAM 2J302 CGH5501 CGH55015
CGH55015F1 Abstract: No abstract text available Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1
Untitled Abstract: No abstract text available Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1
CGH55015F1 Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
Untitled Abstract: No abstract text available Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1
17975 Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302 Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	PDF	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 17975 cgh55015 CGH5501 CGH55015-TB VCGH55015F 2J302