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MACOM CGH21240F RF MOSFET HEMT 28V 440117
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH21240F	Tray	54		1	1 $701.09 10 $701.09 100 $701.09 1000 $701.09 10000 $701.09	Buy Now
Mouser Electronics	CGH21240F					1 - 10 - 100 $701.08 1000 $701.08 10000 $701.08	Get Quote
Richardson RFPD	CGH21240F				1	1 $1119.97 10 $1119.97 100 $1119.97 1000 $1119.97 10000 $1119.97	Buy Now
MACOM CGH21240F-AMP CGH21240F DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH21240F-AMP	Box			2	1 - 10 $1248.875 100 $1248.875 1000 $1248.875 10000 $1248.875	Buy Now
Richardson RFPD	CGH21240F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH21240F Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH21240F		Wolfspeed	GAN HEMT 28V 1.8-2.1GHZ		Original	PDF
CGH21240F		Wolfspeed	GAN HEMT 28V 1.8-2.1GHZ		Original	PDF
CGH21240F-AMP		Wolfspeed	CGH21240F DEV BOARD WITH HEMT		Original	PDF
CGH21240F-AMP		Wolfspeed	CGH21240F DEV BOARD WITH HEMT		Original	PDF

CGH21240F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF
Untitled Abstract: No abstract text available Text: CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	CGH21240F CGH21240F CGH2124	PDF
CGH21240F Abstract: transistor 17556 ATC600F CGH2124 17556 transistor ATC600S CGH21240F-TB JESD22 RO4350 13707 Text: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	CGH21240F CGH21240F CGH2124 transistor 17556 ATC600F CGH2124 17556 transistor ATC600S CGH21240F-TB JESD22 RO4350 13707	PDF
ATC600F Abstract: ATC600S CGH2124 CGH21240F CGH21240F-TB RO4350 Text: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	CGH21240F CGH21240F CGH2124 ATC600F ATC600S CGH2124 CGH21240F-TB RO4350	PDF
Gan on silicon transistor Abstract: Microwave Devices CDPA21480 MESFET CGH21240F LDMOS NONLINEAR digital Pre-distortion silicon carbide NONLINEAR MODEL LDMOS Text: AWR Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Application: Gallium Nitride-based CUSTOMER BACKGROUND While Cree, Inc., based in Durham, NC, is best known outside the microwave	Original		PDF