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    CGH55030F Search Results

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    CGH55030F Price and Stock

    MACOM CGH55030F1

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030F1 Tray 51 1
    • 1 $181.39
    • 10 $150.884
    • 100 $181.39
    • 1000 $181.39
    • 10000 $181.39
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    Mouser Electronics CGH55030F1
    • 1 $177.31
    • 10 $152.39
    • 100 $152.39
    • 1000 $152.39
    • 10000 $152.39
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    MACOM CGH55030F2-AMP

    CGH55030F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55030F2-AMP Box 2
    • 1 -
    • 10 $749.8
    • 100 $749.8
    • 1000 $749.8
    • 10000 $749.8
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    Richardson RFPD CGH55030F2-AMP 1
    • 1 -
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    CGH55030F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH55030F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166 Original PDF
    CGH55030F2 Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 440166 Original PDF
    CGH55030F2-AMP Wolfspeed CGH55030F2 DEV BOARD WITH HEMT Original PDF
    CGH55030F2-AMP Wolfspeed CGH55030F2 DEV BOARD WITH HEMT Original PDF
    CGH55030F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL HEMT AMPLIFIER Original PDF

    CGH55030F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    hemt .s2p

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 hemt .s2p

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F