Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH21120F Search Results

    SF Impression Pixel

    CGH21120F Price and Stock

    MACOM CGH21120F

    RF MOSFET HEMT 28V 440162
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH21120F Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Richardson RFPD CGH21120F 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    MACOM CGH21120F-AMP

    CGH21120F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH21120F-AMP Box
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Richardson RFPD CGH21120F-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    CGH21120F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH21120F Wolfspeed 120W, GAN HEMT, 28V, 1.8-2.1GHZ, Original PDF
    CGH21120F Wolfspeed 120W, GAN HEMT, 28V, 1.8-2.1GHZ, Original PDF
    CGH21120F-AMP Wolfspeed CGH21120F DEV BOARD WITH HEMT Original PDF
    CGH21120F-AMP Wolfspeed CGH21120F DEV BOARD WITH HEMT Original PDF

    CGH21120F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz 9939

    Abstract: CGH21120F-TB ATC600F atc600s 09391 17040 CGH2112 CGH21120F RO4350 Linearizer
    Text: PRELIMINARY CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112 oz 9939 CGH21120F-TB ATC600F atc600s 09391 17040 CGH2112 RO4350 Linearizer

    CGH21120

    Abstract: No abstract text available
    Text: CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112 CGH21120F-TB CGH21120

    Untitled

    Abstract: No abstract text available
    Text: CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112

    ATC600S

    Abstract: CGH21120F CGH21120F-TB ATC600F CGH2112 JESD22 RO4350 amplifier circuit CGH21120 6822 TRANSISTOR
    Text: PRELIMINARY CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112 ATC600S CGH21120F-TB ATC600F CGH2112 JESD22 RO4350 amplifier circuit CGH21120 6822 TRANSISTOR

    CGH21120

    Abstract: No abstract text available
    Text: CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112 CGH21120F-TB CGH21120

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F