33N50 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F61633N50FPV		Renesas Electronics Corporation	Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion)

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HUBER+SUHNER 33_N-50-0-7-133_NE 33_N-50-0-7/133_NE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	33_N-50-0-7-133_NE	Bulk	100		1	1 $72.15 10 $58.818 100 $50.9375 1000 $50.9375 10000 $50.9375	Buy Now
SiTime Corporation SIT1602BC-83-33N-50.000000 MEMS OSC XO 50.0000MHZ H/LV-CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT1602BC-83-33N-50.000000		81		1	1 $1.16 10 $1.104 100 $0.9245 1000 $0.75761 10000 $0.66773	Buy Now
SiTime Corporation SIT9365AC-1E1-33N50.000000 MEMS OSC XO 50.0000MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9365AC-1E1-33N50.000000				1	1 $13.71 10 $12.83 100 $11.9452 1000 $11.76824 10000 $11.76824	Buy Now
SiTime Corporation SIT1602BC-21-33N-50.000000 MEMS OSC XO 50.0000MHZ H/LV-CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT1602BC-21-33N-50.000000				1	1 $1.48 10 $1.412 100 $1.1819 1000 $0.96853 10000 $0.85362	Buy Now
SiTime Corporation SIT1602BI-72-33N-50.000000 MEMS OSC XO 50.0000MHZ H/LV-CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT1602BI-72-33N-50.000000				1	1 $1.41 10 $1.348 100 $1.1282 1000 $0.92448 10000 $0.8148	Buy Now

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33N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500	Original	33N50 O-264	PDF
125OC Abstract: IXTK33N50 Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data TO-264 AA Symbol Test conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous	Original	33N50 O-264 125OC IXTK33N50	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C	Original	IXFK33N50 IXFK35N50 O-264 33N50 35N50	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
IXTK33N50 Abstract: No abstract text available Text: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V	Original	O-264 struct38 IXTK33N50	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
35N50 Abstract: NS4250 IXFK33N50 IXFK35N50 Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C	Original	IXFK33N50 IXFK35N50 O-264 33N50 35N50 35N50 NS4250 IXFK33N50 IXFK35N50	PDF
MOSFET 11N80 Data sheet Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250	Original	O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs 33N50 IXFX35N50 VDSS ID25 33A 35A 500V N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr RDS on  160m  150m TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M	Original	IXFK33N50 IXFX35N50 O-264 PLUS247TM	PDF
IXTK33N50 Abstract: No abstract text available Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V	OCR Scan	33N50 O-264AA 33N50 IXTK33N50	PDF
TO-264-aa Abstract: No abstract text available Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C	OCR Scan	IXFK33N50 IXFK35N50 33N50 35N50 O-264AA outlinesTO-264AAexceptL, TO-264-aa	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60	PDF

264AA Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA Text: HiPerFET Power MOSFETs ^D S S 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C	OCR Scan	IXFK33N50 IXFK35N50 to150 33N50 35N50 O-264AA 264AA SMD-264 TO264AA smd diode 513 TO-264-aa diode 253 TO-264AA	PDF
IXTN 36N50 C Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20	OCR Scan	O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50	PDF
3CUN Abstract: IXTK33N45 IXTK33N50 Text: Preliminary Data Sheet v High Current MegaMOS FET IXTK33N45 33N50 p DSS ^D25 450 V 500 V DS on 33 A 0.16 Q 33 A 0.17 Q N-Channel Enhancement Mode M axim um ra tin g s Sym bol Test c o n d itio n s VDss Tj = 25°C to 150°C v DGR Tj = 2 5 °C to 150°C; %s = 1.0 MO	OCR Scan	IXTK33N45 IXTK33N50 33N50 33N45 33N45 O-264 3CUN IXTK33N50	PDF
IRFP 640 Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100 Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140	OCR Scan	135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100	PDF
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80	PDF
6N80 Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68	OCR Scan	67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP	PDF
IXTK33N50 Abstract: 33N50 IXTK33N45 P 317 diode aa 113 Text: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET IXTK33N45 33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i	OCR Scan	IXTK33N45 IXTK33N50 33N50 33N45 00G4DD7 P 317 diode aa 113	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50	PDF
IXTK33N50 Abstract: No abstract text available Text: n ixY S High Current MegaMOS FETs 33N50 = 500 V V D SS = 33 A = 0.17 0 D 25 RD S o n N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions V DSS T j = 2 5 °C to 150°C v DGR T d = 25°C to 150°C; RGS = V GS Maximum Ratings TO-264 AA	OCR Scan	IXTK33N50 O-264 IXTK33N50	PDF
TO-264-aa Abstract: d2529 Text: IXYS HiPerFET IXFK 35N50 V DSS Power MOSFETs I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 35 A 0.15 Q trr <250 ns Preliminary data Symbol Test Conditions Maximum Ratings V oss Tj =25°Cto150°C 500 V VDGR T, = 25° C to 150° C; RGS= 1 M£2	OCR Scan	35N50 Cto150 TO-264-aa d2529	PDF

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33N50 Search Results

33N50 Result Highlights (1)

33N50 Price and Stock

HUBER+SUHNER 33_N-50-0-7-133_NE

SiTime Corporation SIT1602BC-83-33N-50.000000

SiTime Corporation SIT9365AC-1E1-33N50.000000

SiTime Corporation SIT1602BC-21-33N-50.000000

SiTime Corporation SIT1602BI-72-33N-50.000000

33N50 Datasheets Context Search

Untitled

125OC

Untitled

C1162

IXTK33N50

sd 20n60

7n60b

35N50

MOSFET 11N80 Data sheet

C1146

Untitled

IXTK33N50

TO-264-aa

ixys ixfn 55n50

264AA

IXTN 36N50 C

3CUN

IRFP 640

11n80

6N80

IXTK33N50

52N30

IXTK33N50

TO-264-aa