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    IXTK33N50

    Abstract: 33N50 IXTK33N45 P 317 diode aa 113
    Text: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET IXTK33N45 IXTK33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i


    OCR Scan     		IXTK33N45 IXTK33N50 33N50 33N45 00G4DD7 P 317 diode aa 113 PDF