Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    110N06 Search Results

    SF Impression Pixel

    110N06 Price and Stock

    Goford Semiconductor G110N06T

    MOSFET N-CH 60V 110A TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G110N06T Tube 10,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.647
    • 10000 $0.617
    		Buy Now
    G110N06T Tube 80 1
    • 1 $1.6
    • 10 $1.309
    • 100 $1.0181
    • 1000 $0.70296
    • 10000 $0.60115
    		Buy Now

    Goford Semiconductor G110N06K

    N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G110N06K Reel 10,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.55146
    		Buy Now

    Goford Semiconductor GT110N06M

    MOSFET N-CH 60V 45A 52W TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT110N06M Reel 6,400 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.33
    • 10000 $0.33
    		Buy Now

    Goford Semiconductor GT110N06D5

    N60V, 45A,RD<11M@10V,VTH1.0V~2.4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT110N06D5 Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29038
    		Buy Now
    GT110N06D5 Cut Tape 4,976 1
    • 1 $0.87
    • 10 $0.755
    • 100 $0.5227
    • 1000 $0.37168
    • 10000 $0.33103
    		Buy Now

    Infineon Technologies AG BSZ110N06NS3GATMA1

    MOSFET N-CH 60V 20A 8TSDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSZ110N06NS3GATMA1 Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.32324
    		Buy Now
    BSZ110N06NS3GATMA1 Cut Tape 4,350 1
    • 1 $0.86
    • 10 $0.704
    • 100 $0.5474
    • 1000 $0.37799
    • 10000 $0.35583
    		Buy Now
    Rochester Electronics BSZ110N06NS3GATMA1 10 1
    • 1 $0.3764
    • 10 $0.3764
    • 100 $0.3538
    • 1000 $0.3199
    • 10000 $0.3199
    		Buy Now
    New Advantage Corporation BSZ110N06NS3GATMA1 10,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3667
    		Buy Now
    Find more 110N06 price and stock on Findchips.com

    110N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    110N06N

    Abstract: IEC61249-2-21 JESD22 BSZ110N06NS3G
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSZ110N06NS3 IEC61249-2-21 110N06N 10angerous 110N06N IEC61249-2-21 JESD22 BSZ110N06NS3G

    marking D78

    Abstract: smd diode marking 78A
    Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A

    110N06

    Abstract: 9000 044 053 siemens 110N07 P8000
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF ID130 150OC 100OC 110N06 9000 044 053 siemens 110N07 P8000

    110N06N

    Abstract: BSZ110N06NS3 G 110N06 JESD22 ua323
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSZ110N06NS3 110N06N 110N06N BSZ110N06NS3 G 110N06 JESD22 ua323

    Untitled

    Abstract: No abstract text available
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max 11 mW ID 50


    Original     		PDF BSC110N06NS3 IEC61249-2-21 110N06NS

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    110N06NS

    Abstract: JESD22 ua323
    Text: Type 110N06NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSZ110N06NS3 110N06NS 110N06NS JESD22 ua323

    9000 044 053 siemens

    Abstract: 110N07
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF O-264 ID130 150OC 100OC 9000 044 053 siemens 110N07

    110N06L

    Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
    Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3 P-TO26 PG-TO220-3 110N06L 110N06L smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N diode smd 312

    Untitled

    Abstract: No abstract text available
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSZ110N06NS3 110N06N

    Untitled

    Abstract: No abstract text available
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC110N06NS3 110N06NS

    110N06N

    Abstract: No abstract text available
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSZ110N06NS3 110N06N 60K/W 110N06N

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A


    Original     		PDF HY110N06T O-220AB 2002/95/EC O-220AB 250mA 125oC -55oC 11-May-2012

    110N06L

    Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
    Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L 110N06L g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    TO-264 Jedec package outline

    Abstract: ID130 110N07
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07


    Original     		PDF O-264 ID130 150OC 100OC TO-264 Jedec package outline ID130 110N07

    PG-TO220-3

    Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L
    Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L IEC61249-2-21 PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L PG-TO220-3 PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L

    110N06NS

    Abstract: BSC110N06NS3 BSC110N06NS3 G JESD22 FS25
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC110N06NS3 110N06NS 110N06NS BSC110N06NS3 G JESD22 FS25

    110N06NS

    Abstract: BSC110N06NS3 G BSC110N06NS3G BSC110N06NS3 IEC61249-2-21 JESD22 MARKING d50 FS25
    Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC110N06NS3 IEC61249-2-21 110N06NS 110N06NS BSC110N06NS3 G BSC110N06NS3G IEC61249-2-21 JESD22 MARKING d50 FS25

    200N06

    Abstract: 4835 b 110N06 n
    Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)


    OCR Scan     		PDF IXFK110N06 O-264 OT-227 E153432 13Fig, 110NO6 200M06 110N07 200N06 4835 b 110N06 n

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i


    OCR Scan     		PDF O-264 110N06 105N07 110N07

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B