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    5N10 Search Results

    5N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F72865N100FP#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    R5F72865N100FA#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    R5F72855N100FP#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    G825N10201DEU Amphenol Communications Solutions Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x10Pin, MATTE TIN, LCP, 3.2mm*2.0mm*2.8mm, T&R, CAP Visit Amphenol Communications Solutions
    SiT1602BC-22-25N-10.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    5N10 Price and Stock

    Holy Stone Enterprise Co Ltd C0805N103J050T

    CAP CER 10000PF 50V C0G/NP0 0805
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    DigiKey C0805N103J050T Digi-Reel 11,269 1
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    Goford Semiconductor GT095N10K

    N100V, RD(MAX)<10.5M@10V,RD(MAX)
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    DigiKey GT095N10K Cut Tape 6,432 1
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    Laird, A DuPont Business TYS50401R5N-10

    FIXED IND 1.5UH 4.3A 15 MOHM SMD
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    DigiKey TYS50401R5N-10 Cut Tape 5,531 1
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    onsemi FDP8D5N10C

    MOSFET N-CH 100V 76A TO220-3
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    DigiKey FDP8D5N10C Tube 745 1
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    Rochester Electronics FDP8D5N10C 130 1
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    Susumu Co Ltd RG1005N-104-W-T1

    RES SMD 100KOHM 0.05% 1/16W 0402
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    DigiKey RG1005N-104-W-T1 Digi-Reel 319 1
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    5N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    5N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF 5N100 5N100A O-204 O-247

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    AEC-Q200-002

    Abstract: RFLW5N1500
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •


    Original     		PDF RFLW5N1200A RFLW5N8000B RFLW5N1500A RFLW5N1000A 100is 102See 122See 21-Apr-11 AEC-Q200-002 RFLW5N1500

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    relay ctk 1c

    Abstract: amphenol 203/743 9272 siemens relay 24vdc siemens TC65 1492-N1 paladin 172 410 CNA10 1786-BNC inverter welder schematic diagram cbt 600 crimp tool
    Text: Allen-Bradley ControlNet Network Cat. No. 9220PDG51 Product Developer’s Guide Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps


    Original     		PDF 9220PDG51) relay ctk 1c amphenol 203/743 9272 siemens relay 24vdc siemens TC65 1492-N1 paladin 172 410 CNA10 1786-BNC inverter welder schematic diagram cbt 600 crimp tool

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    dual diode TO254AA 600V

    Abstract: No abstract text available
    Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package


    OCR Scan     		PDF 1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V

    IXTH5N100A

    Abstract: gs 1117 ax
    Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000


    OCR Scan     		PDF 5N100 5N100A to150 O-247 O-204 O-204 O-247 IXTH5N100 IXTM5N100 IXTH5N100A gs 1117 ax

    MTM5N100

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 5N 95 M T H 5 N 10 0 M TM 5N95 M TM 5N100 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are desig n ed fo r h ig h vo lta g e , high


    OCR Scan     		PDF 5N100 MTH/MTM5N95, MTM5N100

    2sk2674

    Abstract: TMA CM F7W90HVX2
    Text: H V X - ü v U - X M 7 —MOSFET H V X -n SERIES POWER M O SFET O U T L IN E D IM E N S IO N S 2SK2674 C * s o : M T 0 -3 P F 7 W 9 0 H V X 2 MZ » ; iu 900V 7a » .IM * -i s - v r 'r i a n a r - - : J . G r {, » -i._ JA*«? M llM I :r„ i. 1 • S fc S


    OCR Scan     		PDF 2SK2674 F7W90HVX2) l/l00 s-10V. 2sk2674 TMA CM F7W90HVX2

    C289

    Abstract: IXTM5N100A
    Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il


    OCR Scan     		PDF N100A O-247 O-204 O-247 C2-88 IXTH5N100 1XTM5N100 C2-89 C289 IXTM5N100A

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


    OCR Scan     		PDF DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

    5N10K1

    Abstract: 9D10K1 12D10K1A 9N05M1 12D10K1-A 5n02 12P02F1A 6P10K1 9N10K1 12D02M1
    Text: FMK Series DC-DC Converters • OVERVIEW TOKO ’s engineers designed t lese converter modules with primary emphasis on small size, lightv.eight and tow cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for applications not requiring isolation between input and output circuits.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for


    OCR Scan     		PDF TDb7b32

    Untitled

    Abstract: No abstract text available
    Text: 5 | M IT E L SL1466 _ Wideband PLL FM Demodulator Prelim inary Inform ation s e m ic o n d u c t o r CE CE 1 28 DIGF LO 2 27 31 VIDEO FB+ DIGF HI EE 3 26 31 VIDEO + CE AFC WINDOW CE OSC V c c CE 4 25 31 V ID E O - 5 24 31 VIDEO F B - 6 (o O S C + CE


    OCR Scan     		PDF SL1466 SL1466 480MHz.

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 5N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    5N95A

    Abstract: 5N95 5N100 IXTH5N100 IXTH5N95 IXTM5N100 IXTM5N95
    Text: I X Y S □ I X Y CORP 1ÖE D • 4t.0bE2b D00Gb03 IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , S b ■ IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0 -1 0 0 0 V, 2.0 Q /2.4Q MAXIM UM RATINGS Parameter Sym. Drain-Source Voltage 1 V dss V dgr IXTH5N95 IXTMSN9S


    OCR Scan     		PDF D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-247 00A/fjs 5N95A 5N95 5N100 IXTM5N95

    MTH5N100

    Abstract: 5n95 5N100 AN569 MTH5N95 MTM5N100 MTM5N95 0610L mps 2108
    Text: Order this data sheet by MTH5N95/D MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M TH5N95 M TH 5N 100 M TM 5N 95 M TM 5N 100 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS


    OCR Scan     		PDF MTH5N95/D MTH5N95 MTH5N100 MTM5N95 MTM5N100 MTH5N95/D 5n95 5N100 AN569 MTM5N100 0610L mps 2108

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


    OCR Scan     		PDF DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 5N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240