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    3CUN

    Abstract: IXTK33N45 IXTK33N50
    Text: Preliminary Data Sheet v High Current MegaMOS FET IXTK33N45 IXTK33N50 p DSS ^D25 450 V 500 V DS on 33 A 0.16 Q 33 A 0.17 Q N-Channel Enhancement Mode M axim um ra tin g s Sym bol Test c o n d itio n s VDss Tj = 25°C to 150°C v DGR Tj = 2 5 °C to 150°C; %s = 1.0 MO


    OCR Scan     		IXTK33N45 IXTK33N50 33N50 33N45 33N45 O-264 3CUN IXTK33N50 PDF

    IXTK33N50

    Abstract: 33N50 IXTK33N45 P 317 diode aa 113
    Text: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET IXTK33N45 IXTK33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i


    OCR Scan     		IXTK33N45 IXTK33N50 33N50 33N45 00G4DD7 P 317 diode aa 113 PDF