IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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BUZ349
SFN152
YTFP152
YTF152
IRFP152
RFH35Nl0
RFK35Nl0
PB125N60HM
PB125N60HP
IRF150CF
GENTRON
2SK747A
EUM159M
2SK798
EFM159M179
YTFP150
2SK747
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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Original
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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PDF
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eRVDS
Abstract: 2SK797 OS1012
Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.
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OCR Scan
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Jb457S5S
2SK797
eRVDS
OS1012
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PDF
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2SK793
Abstract: 2SK79
Text: 7T-M0 S 2SK793 : o 0 3.2±0.2 15.9MAX • SBEE-e-To / V ( B r ) d s s = 850V : á 3 • JK Ä f ä ß iiT K i 9 y : • S Í l S í f E ; 0 * 0 ' 'o : lQ s s = ± 1 0 0 n A ( # ; * : ) ( V q s = ± 2 0 V ) I DSS = 300/íA ( * * • •> l Y f s l =1.7S ( « $ ) ( I D= 3 A )
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OCR Scan
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2SK793
100nA
300/ia
2-16C1B
2SK793
2SK79
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PDF
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2SK799
Abstract: 2sk79 NEC 701
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK799 The 2SK799 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches Suitable fo r switching power supplies, actuater controls,
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OCR Scan
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2SK799
2SK799
RS39726
1986M
2sk79
NEC 701
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PDF
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MFC 6030
Abstract: JE 33 2SK799 T150 transistor bf 271 m0878 965 transistor tt 22
Text: ~ r— S 7 V • — h SEC m Y = 7 > & * 9 S Field E ffe c t P o w e r T r a n s is to r = F = r iŸ t X N ^ ^ ;u ^ < 7 -M 0 S FE T I t f f l — MOS F E T X " f > 2SK799Ü, # W Ì & ° V d s s = 450 V, Id dg =12 A o f â f > Σ ÎÆ R DS(o n )< 0 .5 Q 0.65 + 0.1
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OCR Scan
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2SK799
2SK799Ã
M0878
MFC 6030
JE 33
2SK799
T150
transistor bf 271
965 transistor
tt 22
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PDF
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2SK795
Abstract: No abstract text available
Text: Power F-MOS FET 2SK795 2SK795 Silicon N-channel Power F-M OS F E T • Package Dimensions ■ Features • Low ON resistance R ds on : R ds (on) = 3 .5 il (typ.) • High switching rate : t( = 30ns (typ.) • No secondary breakdown • High breakdown voltage
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OCR Scan
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2SK795
C-25C
2SK795
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PDF
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2SK797
Abstract: No abstract text available
Text: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES
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OCR Scan
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Jb457S2S
2SK797
2SK797
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PDF
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VW-20V
Abstract: 2SK79 2SK796A VC-50 2SK796
Text: P ow er F-MOS FET 2SK796, 2SK796A 2S K 796, 2S K 796A Silicon N -ch an n el P ow er F -M O S F E T Package Dimensions • Features • Low O N r e s is ta n c e R ik o n : R c.- (on ) = 3 . 0 f i (ty p .) U n it: m m • High sw itch ing r a te : t« = 4 0 n s (ty p .)
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OCR Scan
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2SK796,
2SK796A
2SK796
2SK79Ã
KK796
\V-25V.
VW-20V.
VW-20V
2SK79
2SK796A
VC-50
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PDF
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DIODE LT 6202
Abstract: 2SK797 m2sk797 TC-6202 S72 MOS T1IU upcll APC1150
Text: M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SK797 N f - ^ ^ '^ '7 - M O S x - " j + r i i f F E T x f m f l MOS FET V, 5 V m i l * IC 2SK797Ü, N f 7 f > / f v < -1 x t - t I f î : mm 15.7 MAX. y iz / ^ f # K , y 4.7 MAX 1.5 . 3.2 ± 0.2 > 7 °<7) S i l f P ( c | I M T - t „
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OCR Scan
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2SK797
2SK797Ü
DIODE LT 6202
2SK797
m2sk797
TC-6202
S72 MOS
T1IU
upcll
APC1150
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PDF
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2SK794
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK794 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. 15.9MAX 0 3.2±0.2 . High Breakdown Voltage : V(BR)DSS=900V
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OCR Scan
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2SK794
100nA
300MA
2SK794
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PDF
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2sk790
Abstract: 2SK79
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII 2SK790 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance : • High Forward Transfer Admittance:
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OCR Scan
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2SK790
100nA
2sk790
2SK79
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PDF
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2SK797
Abstract: No abstract text available
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SK797 The 2SK797 is N-Channel MOS Field Effect Power Transistor designed fo r solenoid, m otor and lamp driver. PACKAGE DIMENSIONS in m illim e te rs inches • Gate Drive — Logic level —
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OCR Scan
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2SK797
2SK797
RS39726
1987M
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PDF
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2SK799
Abstract: 100C
Text: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches
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OCR Scan
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b427S2S
2SK799
2SK799
100C
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PDF
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK796, 2SK796A 2SK796, 2SK796A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) = 3 . OH (ty p .) Unit: mm • High sw itch in g r a te : t f = 4 0 n s (ty p .) k 15._5max.
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OCR Scan
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2SK796,
2SK796A
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PDF
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2SK798
Abstract: M27555
Text: 98D „ c r F I E C T R O N IC S 18945 IN C N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^fl sgggì - D E | m 2 7 S 2 5 GDlflci4S 3 l'es 2 DESCRIPTION The 2SK798 is N-Channel MOS Field Effect Power Transistor K 7 9 8 PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.
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OCR Scan
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2SK798
T-39-13
M27555
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PDF
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2sk792
Abstract: No abstract text available
Text: c^r-MOS 2SK792 ï f l Iü ffl v*y?m o s i K i s ^ 'f O X-< "J -ÏT — ÿ h '7 - f y 'ffl W- U—9 : mm 10.3MAX . 0 3.6±0.2 ÄStET-f, : v BR)DSS = 900 v JRÆrnlgST h* * : ! Yf s ! = 1.0 s ( H i p ) ( I d = 1.5 A ) : lGSS = ± 1 0 0 n A ( Vqs = ± 2 0 V)
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OCR Scan
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PDF
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2SK793
Abstract: 2SK79
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK793 INDUSTRIAL APPLICATIONS Unit in ram HIGH SPEED, HISH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. . High Breakdown Voltage 15.9MAX. 03.2±O.2 : V(BR)DSS=850V
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OCR Scan
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2SK793
2SK793
2SK79
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PDF
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2SK796
Abstract: 2SK796A 2SK79 V4160
Text: P o w er F-MOS FET 2SK796, 2 S K 79 6 A 2SK 796, 2SK796A Silicon N-channel Power F-MOS FET P a c k a g e D im e n s io n s • F e a tu re s • L ow ON r e s is ta n c e R d s on : R Ds (on) = 3 . 0 1 } (ty p .) Unit: mm • High sw itching ra te : tf = 4 0 n s (ty p .)
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OCR Scan
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2SK796,
2SK796A
2SK796
2SK796A
2SK79
V4160
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PDF
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2SK798
Abstract: No abstract text available
Text: „ r r E . F C T R O N IC S 98D IN C 1 8 9 4 5 D X '~ $ e} - ' 3 ' _ V- i t ' ~ - ,7' ~V r B M M iT liifir fT N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR g s r-; Tfl DESCRIPTION FEATURES DËJ m27S25 GD lfl ci4S i*at 2SK798 The 2SK798 is N-Channel MOS Field Effect Power Transistor
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OCR Scan
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b427S2S
2SK798
0000F
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PDF
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2SK799
Abstract: No abstract text available
Text: ca,75?5 N E C ELECTRONICS INC 98D 1894S D T- ¡<¡ ~/3 'n - c h a n n e l m o s fie ld e f f e c t po w er t r a n s is t o r "h ä DESCRIPTIO N FEA TU RES De | b 4 2 7 s a s 0018148 1 | ’ The 2SK799 is N-channel MOS Field Effect Power Transistor designed for switching power supplies, DC-OC converters.
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OCR Scan
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b427S2S
2SIC799
2SK799
Cur27S5S
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PDF
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2sk791
Abstract: No abstract text available
Text: 2SK791 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. 10.3MAX. . . H i g h B reakdown Voltage : V ( b r ) dj ;s =850V
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OCR Scan
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2SK791
100nA
2sk791
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PDF
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1000C
Abstract: 2SK795
Text: P ow er F-M O S F E T 2SK795 2SK795 Silicon N-channel Power F-M O S F E T • Package Dimensions ■ Features • Low ON resistan ce R ds on : Rds (on) = 3 .5 il (typ.) • High switching ra te : t f = 30ns (typ.) Unit: mm • No secondary breakdow n • High breakdow n voltage
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OCR Scan
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2SK795
D017Cm
1000C
2SK795
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PDF
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2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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OCR Scan
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2SK1529
2SK1530
2SK357
2SK358
2SK525
2SK526
2SK532
2SK387
2SK572
2SK578
2SK1118
2SK1513
TO-3P
2SK1723
2SK790
p-channel fet to-220
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PDF
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