2SK1228-(TX)
Abstract: No abstract text available
Text: 2SK1228 Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 ● 2.5V drive possible 1.45 Gate-protection diode built-in 1 3 +0.1 ● 0.65±0.15 Gate-Source voltage VGSO 10 V Drain current ID ±50 mA Max drain current
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2SK1228
2SK1228-(TX)
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2SK1228
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode
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2SK1228
2SK1228
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2SK1228
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching Unit: mm (0.65) 2 1 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings (Ta = 25°C) Unit Drain to Source voltage VDS 50 V Gate to Source voltage VGSO 10 V Drain current ID 50
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2SK1228
2SK1228
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Drain-source voltage
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2002/95/EC)
2SK1228
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2SK1228
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Unit Drain-source voltage
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2002/95/EC)
2SK1228
2SK1228
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05
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2002/95/EC)
2SK1228
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2SK1228
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 Unit Drain-source voltage VDS 50 V Gate-source voltage (Drain open)
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2SK1228
2SK1228
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05
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2002/95/EC)
2SK1228
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2sk122
Abstract: 2SK1228
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Peak drain current Power dissipation Channel temperature
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2002/95/EC)
2SK1228
2sk122
2SK1228
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2SK1228
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode
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2SK1228
2SK1228
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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SSSMini3-F1 transistor
Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)
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2SK0601
2SK614)
2SK664)
2SK665)
2SK1228
2SK1374
2SK3539
2SK3546J
2SK3547
2SK2211
SSSMini3-F1 transistor
2SK0664
2sk60
2SK0601
2SK0614
2SK0615
2SK0655
2SK0656
2SK601
2SK614
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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QN7002
Abstract: SC59 MARKING JM nec sc-59 fet 2sa812a-t1b-at 2SC1623A transistor mos fet 2n7002 nec amplifiers 2SA812-T1B-A RK7002A
Text: Small Signal Transistor / MOS FET High Production Efficiency Super Matrix Line Products NEC Electronics reintroduces commonly used products with resonable price. Features • Manufactured in uniform bulk batches on super-efficient production lines matrix: multi-row simultaneous forming lead
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D18259EJ4V0PF00
QN7002
SC59 MARKING JM
nec sc-59 fet
2sa812a-t1b-at
2SC1623A
transistor mos fet 2n7002
nec amplifiers
2SA812-T1B-A
RK7002A
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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2sk to-92
Abstract: No abstract text available
Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80
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2SK601
2SK614
2SK615
2SK620
A2SK2276
A2SK2342
2sk to-92
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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2SK1227
Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060
Text: ft f m % ít ffl € m m & X % * fr K * V ft (V) 2SK1203 a i SW-Reg, D D C MOS N E 9 00 D S S ±20 2SK1204 H i SW-Reg, D D C MO S N E 900 D SS ±20 a» X P d/Pc h I* ft* (A) (max) (A) Vd s (V) (min) (V) (max) V d s (V) (V) (13=25^) tí g m (min) (typ)
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2SK1203
2SK1204
2SK1205
2SK1206
2SK1211
2SK1230
115nstyp
2SK1231
2SK1232
2SK1227
2sk1210
2SK1213
2SK1217
2SK1229
2SK1222
2SK1239
2SK1231
2SK120
csd 1060
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SK2276
Abstract: 2sk227
Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40
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2SK601
2SK614
2SK615
2SK620
2SK2276
2SK2277
2SK2342
2SK2474
2SK2495
A2SK2660
2SK2276
2sk227
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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