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    2SD1947A Search Results

    2SD1947A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1947A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1947A Toshiba Silicon NPN epitaxial type transistor for high current switching switching, lamp, solenoid drive applications Scan PDF
    2SD1947A Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

    2SD1947A Datasheets Context Search

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    D1947

    Abstract: D1947A 2SD1947A
    Text: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original     		PDF 2SD1947A D1947 D1947A 2SD1947A

    D1947A

    Abstract: D1947 2SD1947A
    Text: 2SD1947A 東芝トランジスタ シリコンNPNエピタキシャル形 2SD1947A 通 信 工 業 用 ○ 大電流スイッチング用 ○ ランプソレノイド駆動用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE sat = 0.3 V (最大) (IC = 5 A)


    Original     		PDF 2SD1947A 2-10R1A 20070701-JA D1947A D1947 2SD1947A

    D1947

    Abstract: 2SD1947A dsae00215
    Text: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original     		PDF 2SD1947A D1947 2SD1947A dsae00215

    d1947

    Abstract: D1947A
    Text: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original     		PDF 2SD1947A 2-10R1A d1947 D1947A

    D1947A

    Abstract: No abstract text available
    Text: 2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original     		PDF 2SD1947A D1947A

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    2SD1947A

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS r • • High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE ( s a t ) = 0.3V (Max.) (IC = 5A)


    OCR Scan     		PDF 2SD1947A 2SD1947A

    Untitled

    Abstract: No abstract text available
    Text: 2SD1947A TO SHIBA 2 SD1 9 4 7 A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm High DC Current Gain : hFE = 500-1500 Oc = lA Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1947A

    KF 25 transistor

    Abstract: 2SD1947A
    Text: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE (sat) = 0.3V (Max.) (IC = 5A)


    OCR Scan     		PDF 2SD1947A KF 25 transistor 2SD1947A

    2SD1947A

    Abstract: No abstract text available
    Text: T O S H IB A 2SD1947A 2SD1947A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SW ITCHING APPLICATIONS LA M P , SOLENOID DRIVE APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm r High DC Current Gain : hjrE = 500~ 1500 I0 = 1A Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1947A 2SD1947A

    2SD1947A

    Abstract: No abstract text available
    Text: 2SD1947A TO SH IB A 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS t • High DC Current Gain : hFE = 500-1500 Ic = lA Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1947A 2SD1947A