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    Essentra Components PIN2-1/4B

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    144PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


    Original     		PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    SuperPro-5000

    Abstract: atmel 89C51 user manual atmel 89C51 projects Superpro 3000U CF Socket DIP48 PLCC20 PIN DIAGRAM AND WORKING OF AT 89C51 89c51 c programming examples XELTEK cx0001 SUPERPRO 500P
    Text: User’s Guide XELTEK Superpro 5000 Series Ultra-Fast, Stand‐Alone, 144pin Programmer of the Future XELTEK 1296 Kifer Rd. Unit 605 Sunnyvale, CA 94086 Tel: 408 530‐8080 Fax: (408) 530‐0096 www.xeltek.com IMPORTANT! 1. This manual applies to SuperPro 5000, SuperPro 5000E, SuperPro


    Original     		PDF 144pin 5000E, SuperPro-5000 atmel 89C51 user manual atmel 89C51 projects Superpro 3000U CF Socket DIP48 PLCC20 PIN DIAGRAM AND WORKING OF AT 89C51 89c51 c programming examples XELTEK cx0001 SUPERPRO 500P

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    K4S281632F

    Abstract: m464s1724f K4S281632
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FT59 8Mx16 K4S281632F m464s1724f K4S281632

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 MICRO SO-DIMM 256MB With 32M X 8 CL3 TS32MMS64V6F Description Placement The TS32MMS64V6F is a 32M x 64bits Synchronous Dynamic RAM high-density for PC-133. The TS32MMS64V6F consists of 8pcs CMOS 32Mx8 bits C Synchronous DRAMs in SOC packages and a 2048 bits


    Original     		PDF 144PIN PC133 256MB TS32MMS64V6F TS32MMS64V6F 64bits PC-133. 32Mx8 144-pin

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of


    Original     		PDF 144PIN PC133 256MB 16MX8 TS32MSS64V6D TS32MSS64V6D 144-pin JEP-108E

    K4S281632E

    Abstract: No abstract text available
    Text: 64MB Unbuffered uSODIMM SDRAM SDRAM Unbuffered uSODIMM 144pin Unbuffered uSODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB Unbuffered uSODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release Revision 1.1 (May, 2003)


    Original     		PDF 144pin 128Mb 64-bit 133MHz. 144Pi M463S0924ET1-C 8Mx16 K4S281632E) 133MHz K4S281632E

    Untitled

    Abstract: No abstract text available
    Text: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 16Mx72 PC100 8Mx16 HYM71V16M755HC 16Mx72bits 8Mx16bits 400mil 54pin 144pin

    Untitled

    Abstract: No abstract text available
    Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 32Mx64bits PC100 16Mx16 HYM72V32M656B 32Mx64bits 16Mx16bits 400mil 54pin 144pin

    support samsung pc133 sdram

    Abstract: pc133 SDRAM DIMM 4MX16
    Text: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 0.0 Oct. 1999 Rev. 0.0 Oct. 1999 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published.


    Original     		PDF PC133 144pin) M464S0424CT1-L75/C75 M464S0824CT1-L75/C75 M464S0924BT1-L75/C75 M464S1724BT1-L75/C75 M464S1654AT1-L75/C75 support samsung pc133 sdram pc133 SDRAM DIMM 4MX16

    HSD8M64B8A

    Abstract: No abstract text available
    Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B8A 64Mbyte 8Mx64-Bit) 144pin HSD8M64B8A 400mil 144-pin HSD8M64B8

    kr 720

    Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
    Text: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B4W 64Mbyte 8Mx64-Bit) 144pin HSD8M64B4W 400mil 144-pin kr 720 HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12

    K4S281632C-TL1L

    Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L


    Original     		PDF 144pin) 128Mb M466S0924CT0-L1L, 8Mx64 8Mx16 K4S281632C-TL1L, 000mil 4K/64ms 128bytes 256bytes K4S281632C-TL1L M466S1723CT2-L1L M466S1723CT3-L1L

    Untitled

    Abstract: No abstract text available
    Text: 16Mx72bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T8 Series DESCRIPTION The HYM71V16M755HC(L)T8 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 16Mx72bits PC100 16Mx8 HYM71V16M755HC 16Mx72bits 16Mx8bits 400mil 54pin 144pin

    m464s64* samsung

    Abstract: K4S560832E K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s64* samsung K4S560832E K4S561632E

    HYM71V16M655BLT8-8

    Abstract: HYM71V16M655BLT8-S HYM71V16M655BT8-P HYM71V16M655BT8-S
    Text: 16Mx64bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M655B L T8 Series Preliminary DESCRIPTION The Hynix HYM71V16M655B(L)T8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin


    Original     		PDF 16Mx64bits PC100 16Mx8 HYM71V16M655B 16Mx64bits 16Mx8bits 400mil 54pin 144pin HYM71V16M655BLT8-8 HYM71V16M655BLT8-S HYM71V16M655BT8-P HYM71V16M655BT8-S

    RA12

    Abstract: HYM72V32M736BLT6-H
    Text: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.


    Original     		PDF 32Mx72bits PC133 16Mx16 HYM72V32M736B 32Mx72bits 16Mx16bits 400mil 54pin 144pin RA12 HYM72V32M736BLT6-H

    HYM72V16M656BTU6

    Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
    Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 16Mx64 PC100 16Mx16 HYM72V16M656BTU6 8Mx64bits 16Mx16bits 400mil 54pin 144pin HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12

    KMM464S824CT1

    Abstract: No abstract text available
    Text: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM464S824CT1 PC100 144pin KMM464S824CT1 8Mx64 4Mx16,

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FTS-C M464S1724FTS-C

    RA12

    Abstract: No abstract text available
    Text: 32Mx64bits PC133 SDRAM SO DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T8 Series DESCRIPTION The HYM72V32M636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed


    Original     		PDF 32Mx64bits PC133 32Mx8 HYM72V32M636T8 32Mx64bits 32Mx8bits 400mil 54pin 144pin RA12

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.


    OCR Scan     		PDF KMM466S823BT2 144pin KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous


    OCR Scan     		PDF KMM466S824CT2_ 144pin KMM466S824CT2 8Mx64 4Mx16, 466S824CT2 466S824CT2- 100MHz 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM


    OCR Scan     		PDF KMM466S1723T3_ 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil