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    Cypress Semiconductor MB95F128MBPF-G-JNE1

    NO WARRANTY
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    Cypress Semiconductor MB95F128MBPF-G-N9E1

    NO WARRANTY
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    DigiKey MB95F128MBPF-G-N9E1 Tray 310 1
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    Amphenol ProLabs CF/128MB-C

    JEDEC Standard 128MB 68-pin Comp
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    UNIVERSAL-SOLDER Electronics Ltd STM32F411CEU6 BLACK PILL PRO 128MB

    STM32F411 BLACKPILL EVAL BRD
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    Infineon Technologies AG MB95F128MBPF-GE1

    IC MCU 8BIT 60KB FLASH
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    128MB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    128MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original PDF

    128MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    s3c2440 pin

    Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
    Text: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)


    Original     		PDF Mini2440-I S3C2440A ARM920T 64Mbyte 32MB/128MB 128Mbyte 256Mbyte 12MHz 200MHz 32768Hz s3c2440 pin s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP EINT20

    IS42S32400D

    Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
    Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S32400D 128-MBIT 128Mb rS32400D-7TI 86-Pin IS42S32400D-7TLI IS42S32400D-7BI IS42S32400D 42S32400D is42s32400d-6bli IS42S32400D-7TLI

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    SpecTek

    Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
    Text: 128Mb: x4, x8, x16 SDRAM 3.3V ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70 °C Supply Current OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC MIN , one bank active, CL=3 STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,


    Original     		PDF 128Mb: SymS80016LK7 S16008LK9 54-pin 60-ball PC100 PC133 S80016LK7TW-8A 09005aef807827f6 SpecTek S16008 IDD8 S80016LK7TW-8A S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    DDR200

    Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
    Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN612404GT3B IBMN612804GT3B 128Mb DDR266A DDR266B DDR200 06K0566 F39350B DDR200 DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266

    MT48LC4M32B2P

    Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
    Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2

    SCANBE

    Abstract: SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604
    Text: MVME2300 TM VME Processor Modules ♦ PowerPC 603 or PowerPC 604™ 32-bit microprocessor ♦ L1 cache–16KB/16KB PowerPC 603 or 32KB/32KB PowerPC 604 ♦ 16MB to 128MB of on-board ECC DRAM ♦ Up to 1MB socketed Flash for on-board firmware or user-specified requirements


    Original     		PDF MVME2300 603TM 604TM 32-bit 16KB/16KB 32KB/32KB 128MB 32/64-bit 64-bit 32-bit SCANBE SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8

    Nanya nt5ds8m16fs

    Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		PDF NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb Nanya nt5ds8m16fs NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS

    NT5SV8M16FS

    Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
    Text: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •


    Original     		PDF NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb PC166 PC133 NT5SV8M16FS Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K

    K4R271669F

    Abstract: No abstract text available
    Text: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669F 128Mbit K4R271669F

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    K4S280432C

    Abstract: K4S280432D
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History Revision 0.0 Mar., 2001


    Original     		PDF K4S280432D 128Mbit 100MHz A10/AP K4S280432C K4S280432D

    K4R271669E

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669E 128Mbit K4R271669E

    AY-133

    Abstract: BA1U15 mt18lsdt3272ag10 168-PIN MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B
    Text: 128MB x72, ECC, SR , 256MB (x72, ECC, DR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT9LSDT1672A(I) – 128MB MT18LSDT3272A(I) – 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • •


    Original     		PDF 128MB 256MB 168-PIN MT9LSDT1672A MT18LSDT3272A PC100- PC133-compliant AY-133 BA1U15 mt18lsdt3272ag10 MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B

    k4h561638f

    Abstract: DDR266 DDR333 ECC SODIMM
    Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release


    Original     		PDF 128MB, 256MB 200pin 72-bit k4h561638f DDR266 DDR333 ECC SODIMM

    DELL inspiron power supply diagram

    Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
    Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for


    Original     		PDF 4MByte/96MByte/128MByte/160MByte/224MByte W7B6016M1XG-S128 W7B6016M1XG-S7 W7B6032M1XG-S128 W7B6032M1XG-S7 W7B6048M1XG-S128 W7B6048M1XG-S7 W7B6064M1XG-S128 W7B6064M1XG-S7 W7B6032M1XG-S256 DELL inspiron power supply diagram Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8

    DDR333

    Abstract: DDR400 K4H281638E-TCCC
    Text: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)


    Original     		PDF 128Mb DDR400 200MHz 400Mbps DDR333 K4H281638E-TCCC

    MT4LSDT1664

    Abstract: MT4LSDT464 MT4LSDT864 MT4LSDT1664HG-133B1 HY10
    Text: 32MB, 64MB, 128MB x64, SR 144-PIN SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464(L)H(I) – 32MB MT4LSDT864(L)H(I) – 64MB MT4LSDT1664(L)H(I) – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules


    Original     		PDF 128MB 144-PIN MT4LSDT464 MT4LSDT864 MT4LSDT1664 MO-190) PC100 PC133 MT4LSDT1664HG-133B1 HY10

    K4S281632F

    Abstract: m464s1724f K4S281632
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FT59 8Mx16 K4S281632F m464s1724f K4S281632