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    American Portwell Technology Inc 4G DDR3L SODIMM

    MEM SODIMM DDRIIIL 1600 4GB - Bulk (Alt: 4G DDR3L SODIMM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 4G DDR3L SODIMM Bulk 1
    • 1 $68.58
    • 10 $66.96
    • 100 $62.1
    • 1000 $62.1
    • 10000 $62.1
    		Buy Now

    ADLINK Technology Inc 4G DDR4 2133 260P SO-DIMM

    4G DDR4 2133 260P 4GB SO-DIMM - Bulk (Alt: 4GB DDR4 2133 260P SO-DIMM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 4G DDR4 2133 260P SO-DIMM Bulk 13 Weeks 1
    • 1 -
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    ADLINK Technology Inc 4G DDR4-3200 U-DIMM NON ECC

    ADLINK Technology DDR4-3200,4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(512Mx16)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 4G DDR4-3200 U-DIMM NON ECC
    • 1 $19.92
    • 10 $19.31
    • 100 $18.29
    • 1000 $18.29
    • 10000 $18.29
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    ADLINK Technology Inc 8G DDR4-3200 U-DIMM NON ECC

    ADLINK Technology DDR4-3200, 8GB, 1Gx64, U-DIMM 288P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 8G DDR4-3200 U-DIMM NON ECC
    • 1 $34.54
    • 10 $33.47
    • 100 $31.7
    • 1000 $31.7
    • 10000 $31.7
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    ADLINK Technology Inc 8G DDR4-3200 RDIMM 288P 1RX8

    ADLINK Technology DDR4-3200, 8GB, 1Gx72, R-DIMM 288P, 1.2V, Rank:1, CL22, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8), Anti-sulfur
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 8G DDR4-3200 RDIMM 288P 1RX8
    • 1 $50.48
    • 10 $48.92
    • 100 $46.34
    • 1000 $46.34
    • 10000 $46.34
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    Find more GDDR price and stock on Findchips.com

    GDDR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2007E

    Abstract: 2N2007 CAP 10nF 50V 0603 18126D107MAT 597D108X06
    Text: MIC5162 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for highspeed bus termination. It offers a simple, low-cost JEDEC compliant solution for terminating high-speed, lowvoltage digital buses i.e. DDR, DD2, DDR3, SCSI, GTL,


    Original     		MIC5162 MIC5162 M9999-061509 2N2007E 2N2007 CAP 10nF 50V 0603 18126D107MAT 597D108X06 PDF

    GDDR

    Abstract: K4D553238E-JC33 k4d553238e-jc40
    Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4D553238E-JC 256Mbit 32Bit 144-Ball K4D553238E-JC33/36 15tCK 14tCK 10tCK GDDR K4D553238E-JC33 k4d553238e-jc40 PDF

    k4n26323ae

    Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
    Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003


    Original     		K4N26323AE-GC 128Mbit 32Bit k4n26323ae K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25 PDF

    hyb18h1g321af-11

    Abstract: qimonda hyb18h
    Text: June 2007 HYB18H 1G 321 A F- 1 1 / 1 4 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM RoHS compliant Data S heet Rev. 0.80 Data Sheet HYB18H1G321AF-11/14 1-Gbit GDDR3 HYB18H1G321AF-11/14 Preliminary Revision History: 2007-06, Rev. 0.80 Page Subjects major changes since last revision


    Original     		HYB18H HYB18H1G321AF-11/14 hyb18h1g321af-11 qimonda hyb18h PDF

    HYB18H512321B2F-14

    Abstract: No abstract text available
    Text: March 2008 HYB18H512321B2F–12/14 GDDR3 Graphics RAM 512-Mbit GDDR3 Graphics RAM RoHS compliant Advance Internet Data Sheet Rev. 0.70 Advance Internet Data Sheet HYB18H512321B2F 512-Mbit GDDR3 HYB18H512321B2F–12/14 Revision History: 2008-03, Rev. 0.70 Page


    Original     		HYB18H512321B2F 512-Mbit HYB18H512321B2F-14 PDF

    W641GG2KB

    Abstract: gddr3 schematic WBGA-136 W641GG2
    Text: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7


    Original     		W641GG2KB A01-001 W641GG2KB gddr3 schematic WBGA-136 W641GG2 PDF

    DDR3 pcb layout guidelines

    Abstract: MIC5162YMM DDR3 pcb layout CRCW06031K00FKTA C1608X5R0J106M C2012X5R0J226M GRM188R60J106ME47D GRM21BR60J226ME39L MIC5162 MSOP-10
    Text: MIC5162 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for • Input voltage range: 1.35V to 6V high speed bus termination. It offers a simple, low-cost


    Original     		MIC5162 MIC5162 M9999-033110 DDR3 pcb layout guidelines MIC5162YMM DDR3 pcb layout CRCW06031K00FKTA C1608X5R0J106M C2012X5R0J226M GRM188R60J106ME47D GRM21BR60J226ME39L MSOP-10 PDF

    qimonda hyb18h5

    Abstract: HYB18H512321BF HYB18H512321BF-10 HYB18H512321BF-08/10 gddr3 HYB18H512
    Text: September 2007 HYB18H512321BF–11/12/14 HYB18H512321BF–08/10 512-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM RoHS compliant Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB18H512321BF 512-Mbit GDDR3 HYB18H512321BF–11/12/14 HYB18H512321BF–08/10 Revision History: 2007-09, Rev. 1.1


    Original     		HYB18H512321BF 512-Mbit HYB18H512321BF qimonda hyb18h5 HYB18H512321BF-10 HYB18H512321BF-08/10 gddr3 HYB18H512 PDF

    HYB18H1G321AF-10/11/14

    Abstract: HYB18H1G321AF CL11 SEN 1327 hyb18h1g321af-11 Qimonda AG HYB18H1G321AF A 1837 3G3M
    Text: October 2007 HYB18H1G321AF–10/11/14 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM RoHS compliant Internet Data Sheet Rev. 0.92 Internet Data Sheet HYB18H1G321AF–10/11/14 1-Gbit GDDR3 HYB18H1G321AF–10/11/14 Revision History: 2007-10, Rev. 0.92 Page Subjects major changes since last revision


    Original     		HYB18H1G321AF HYB18H1G321AF-10/11/14 CL11 SEN 1327 hyb18h1g321af-11 Qimonda AG HYB18H1G321AF A 1837 3G3M PDF

    HY5DS283222BF

    Abstract: HY5DS283222BFP-33
    Text: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY5DS283222BF 4Mx32) 1HY5DS283222BF 350Mhz HY5DS283222 728-bit 144ball HY5DS283222BFP-33 PDF

    POWER COMMAND HM 1211

    Abstract: power generation POWER COMMAND HM 1211 6331-1 gddr3 schematic HYB18T256324F-20 infineon sgram
    Text: Data Sheet, Rev. 1.11, April 2005 HYB18T256324F–16 HYB18T256324F–20 HYB18T256324F–22 256-Mbit GDDR3 DRAM [600MHz] RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 04-2005 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		HYB18T256324F 256-Mbit 600MHz] JESD-51 10292004-DOXT-FS0U POWER COMMAND HM 1211 power generation POWER COMMAND HM 1211 6331-1 gddr3 schematic HYB18T256324F-20 infineon sgram PDF

    E4690

    Abstract: No abstract text available
    Text: cPCI-R6700 Series 6U CompactPCI Rear Transition Module with ATI/AMD Radeon E4690 GPU 1 AdvancedTCA Features ATI/AMD Radeon™ E4690 embedded GPU 512MB on-chip GDDR3 VRAM Supports dual independent DVI-I displays Onboard VBIOS update available PICMG 2.16 Packet Switch Backplane R1.0


    Original     		cPCI-R6700 E4690 512MB cPCI-R6700 cPCI-R6700D cPCI-R6700D PDF

    BT 4840 amp

    Abstract: K4D261638K-LC50 K4D261638K-LC40 cs 2648 k4d261638k 3620* IBIS
    Text: K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 November 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4D261638K 128Mbit 16Bit 65TYP 20MAX 25TYP BT 4840 amp K4D261638K-LC50 K4D261638K-LC40 cs 2648 k4d261638k 3620* IBIS PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.2 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-VC 128Mbit 144-Ball PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QG 256Mbit PDF

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Primarily 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.1 Sep 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-VC 128Mbit 144-Ball PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238I-UC 128Mbit GDDR SDRAM Revision 1.1 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-UC 128Mbit PDF

    K4D263238G-VC33

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 February 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4D263238G-GC 128Mbit 32Bit 144-Ball 200MHz/ 166MHz K4D263238G-VC2A K4D263238G-VC33. K4D263238G-VC33 PDF

    K4J10324KE-HC1A

    Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
    Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J10324KE 136FBGA 10tCK 10MAX K4J10324KE-HC1A K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12 PDF

    GDDR

    Abstract: K4D551638H-LC50
    Text: K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D551638H 256Mbit 66pin 65TYP 20MAX 25TYP GDDR K4D551638H-LC50 PDF

    tsop-ii 66 JEDEC TRAY

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY PDF

    K4D263238I-VC50

    Abstract: No abstract text available
    Text: Target 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.0 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238I-VC 128Mbit 144-Ball K4D263238I-VC50 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005 128M GDDR SDRAM


    Original     		K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK PDF