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    K4S561632E Price and Stock

    Samsung Semiconductor K4S561632E-UC60

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    Bristol Electronics K4S561632E-UC60 460 1
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    Quest Components K4S561632E-UC60 368
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    K4S561632E-UC60 2
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    Samsung Semiconductor K4S561632E-TC75

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    Quest Components K4S561632E-TC75 72
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    K4S561632E-TC75 72
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    K4S561632E-TC75 4
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    K4S561632E-TC75 4
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    K4S561632E-TC75 3
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    K4S561632E-TC75 3
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    Samsung Semiconductor K4S561632E-TL75

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    Quest Components K4S561632E-TL75 25
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    K4S561632E-TL75 3
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    Samsung Semiconductor K4S561632E-TL75000

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    Samsung Semiconductor K4S561632E-TI75

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    Quest Components K4S561632E-TI75 8
    • 1 $16.5375
    • 10 $14.7
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    K4S561632E Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S561632E Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-NC60 Samsung Electronics 16M x 16 SDRAM, LVTTL, 166MHz Original PDF
    K4S561632E-NC75 Samsung Electronics 16M x 16 SDRAM, LVTTL, 133MHz Original PDF
    K4S561632E-NC(L)60 Samsung Electronics 256Mb E-die SDRAM Specification 54pin sTSOP-II Original PDF
    K4S561632E-NCL60 Samsung Electronics 16M x 16 SDRAM, LVTTL, 166MHz Original PDF
    K4S561632E-NC(L)75 Samsung Electronics 256Mb E-die SDRAM Specification 54pin sTSOP-II Original PDF
    K4S561632E-TC60 Samsung Electronics 16M x 16 SDRAM, LVTTL, 166MHz Original PDF
    K4S561632E-TC70 Samsung Electronics 16M x 16 SDRAM, LVTTL, 133MHz Original PDF
    K4S561632E-TC75 Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-TC(L)60 Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-TCL60 Samsung Electronics 16M x 16 SDRAM, LVTTL, 166MHz Original PDF
    K4S561632E-TCL70 Samsung Electronics 16M x 16 SDRAM, LVTTL, 133MHz Original PDF
    K4S561632E-TC(L)75 Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-TL60 Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-TL75 Samsung Electronics 256Mb E-die SDRAM Specification Original PDF
    K4S561632E-UC60 Samsung Electronics 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Original PDF
    K4S561632E-UC75 Samsung Electronics 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Original PDF
    K4S561632E-UL60 Samsung Electronics 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Original PDF
    K4S561632E-UL75 Samsung Electronics 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Original PDF

    K4S561632E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    m464s64* samsung

    Abstract: K4S560832E K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004


    Original     		128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s64* samsung K4S560832E K4S561632E PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.2 June. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 June. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		256Mb 166MHz 16Bit A10/AP PDF

    samsung k4s561632e

    Abstract: CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		256Mb 166MHz 16Bit A10/AP samsung k4s561632e CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K4S561632E

    Abstract: K4S560432E K4S560432E-TC K4S560832E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		256Mb 166MHz 16Bit A10/AP K4S561632E K4S560432E K4S560432E-TC K4S560832E PDF

    k4s561632

    Abstract: K4S561632E K4S560432E K4S560432E-UC K4S560832E
    Text: CMOS SDRAM SDRAM 256Mb E-die x4, x8, x16 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16)


    Original     		256Mb 16Bit A10/AP k4s561632 K4S561632E K4S560432E K4S560432E-UC K4S560832E PDF

    philips cx50

    Abstract: at24lc02 FRC 40 PIN Male connector 88E1145 FRC 14 PIN Male connector hynix mcp marvell 88e1145 schematic atx 2.03 P4 capacitor 0.1uf 400v Indutor
    Text: MPC8555E Configurable Development System Reference Manual Supports MPC8555E MPC8541E MPC8555CDSx3RM Rev. 1, 11/2006 Contents Paragraph Number Title Page Number Contents About This Book Audience . xiii


    Original     		MPC8555E MPC8541E MPC8555CDSx3RM philips cx50 at24lc02 FRC 40 PIN Male connector 88E1145 FRC 14 PIN Male connector hynix mcp marvell 88e1145 schematic atx 2.03 P4 capacitor 0.1uf 400v Indutor PDF

    m464s16* samsung

    Abstract: K4S561632E K4S560832E 0603CAP K4S56163
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.1 September, 2003 Rev. 1.1 September, 2003 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 June, 2003


    Original     		128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s16* samsung K4S561632E K4S560832E 0603CAP K4S56163 PDF

    M374S3253ETS-C7A

    Abstract: M374S3253ETU-C7A M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A
    Text: 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb E-die 62/72-bit Non ECC/ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


    Original     		128MB, 256MB, 512MB 168pin 256Mb 62/72-bit M374S3253ETS-C7A M374S3253ETU-C7A M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A PDF

    hynix hy57v281620

    Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
    Text: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors


    Original     		UM10208 LPC2880/LPC2888 LPC2880, LPC2888, LPC288x, 32-bit, LPC288x UM10208 hynix hy57v281620 HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C PDF

    sd 6109

    Abstract: D 431 S1C33L26
    Text: CMOS 32-BIT SINGLE CHIP MICROCONTROLLER S1C33L26 Technical Manual Rev.1.1 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability


    Original     		32-BIT S1C33L26 sd 6109 D 431 S1C33L26 PDF

    M366S3253ETS-C7A

    Abstract: samsung k4s561632e M366S1654ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A 32mx8 sdram
    Text: 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb E-die 62/72-bit Non ECC/ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		128MB, 256MB, 512MB 168pin 256Mb 62/72-bit M366S3253ETS-C7A samsung k4s561632e M366S1654ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A 32mx8 sdram PDF

    K4S561632E

    Abstract: K4S560432E-NC K4S560832E K4S560432E k4s561632 K4S561632E-NCL60
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16)


    Original     		256Mb 54pin 16Bit A10/AP K4S561632E K4S560432E-NC K4S560832E K4S560432E k4s561632 K4S561632E-NCL60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.0 June 2003 Rev. 1.0 June 2003 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 June, 2003


    Original     		128MB, 256MB, 512MB 144pin 256Mb 64-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.3 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 March 2004


    Original     		128MB, 256MB, 512MB 144pin 256Mb 64-bit PDF

    SMD SOT23 transistor MARK Y2

    Abstract: tp link schematic circuit diagram adc modem boar 0805 10V CAPACITOR X7R 4.7UF atmel 16b1 24C64A 88E1145 samsung K5 MCP marvell 88e1145 computer motherboard circuit diagram g31 chipset 30b1 diode
    Text: MPC8548E Configurable Development System Reference Manual Supports MPC8548E MPC8548 MPC8547E MPC8545E MPC8545 MPC8543E MPC8543 MPC8548CDSx3RM Rev. 2, 10/2006 Contents Paragraph Number Title Page Number Contents About This Book Audience .xv


    Original     		MPC8548E MPC8548 MPC8547E MPC8545E MPC8545 MPC8543E MPC8543 MPC8548CDSx3RM SMD SOT23 transistor MARK Y2 tp link schematic circuit diagram adc modem boar 0805 10V CAPACITOR X7R 4.7UF atmel 16b1 24C64A 88E1145 samsung K5 MCP marvell 88e1145 computer motherboard circuit diagram g31 chipset 30b1 diode PDF

    K4S561632E

    Abstract: sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		256Mb 166MHz A10/AP K4S561632E sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604 PDF

    K4S56163

    Abstract: samsung k4s561632e 256MB 32Mx64 CL2 M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A
    Text: 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb E-die 62/72-bit Non ECC/ECC Revision 1.0 June 2003 Rev. 1.0 June 2003 128MB, 256MB, 512MB Unbuffered DIMM SDRAM Revision History Revision 1.0 June, 2003


    Original     		128MB, 256MB, 512MB 168pin 256Mb 62/72-bit K4S56163 samsung k4s561632e 256MB 32Mx64 CL2 M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A PDF