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    GDDR

    Abstract: K4D553238E-JC33 k4d553238e-jc40
    Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.


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    K4D553238E-JC 256Mbit 32Bit 144-Ball K4D553238E-JC33/36 15tCK 14tCK 10tCK GDDR K4D553238E-JC33 k4d553238e-jc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of


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    VL41D1G63B-K0/K9/F8S 1Gx72 204-PIN VL41D1G63B 512Mx8 204-pin 204-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


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    VL33B1K68F-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K68F 28-bit 240-pin 240-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists


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    VL41D5763B-K0/K9/F8S 256Mx72 204-PIN VL41D5763B 256Mx8 204-pin 204-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


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    VL43B1G63A-K0/K9/F8/E7S 1Gx72 204-PIN VL43B1G63A 512Mx8 28-bit 204-pin DDR3-800) PDF

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


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    512M8CN 256M16CP DDR3L-1866 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM


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    VL41B5663A-K9S-F8S-E7S 256MX72 204-PIN VL41B5663A 128Mx8 204-pin A10/AP A12/BC# PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B1K63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered


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    VL33B1K63A-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K63A 256Mx8 28-bit 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL47B1G63A-K0-K9-F8-E7S-S1 REV: 1.0 General Information 8GB 1Gx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B1G63A is a 1Gx64 DDR3 SDRAM high density SODIMM. This memory module is dual rank, consists of


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    VL47B1G63A-K0-K9-F8-E7S-S1 1Gx64 204-PIN VL47B1G63A 512Mx8 204-pin 204-pin, PC3-12800, PC3-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41B5263A-K9S/F8S/E7S-S1 REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC SO-UDIMM 204 PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin MLF


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    VL41B5263A-K9S/F8S/E7S-S1 512MX72 VL41B5263A 204-pin 204-pin, VN-121009 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


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    VL53B5263A-K9S-F8S-E7S 512MX72 VL53B5263A 256Mx8 28-bit 244-pin 244-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B2K69F-K0/K9/F8S REV: 1.0 General Information 16GB 2Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B2K69F is a 2Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of eighteen stacked CMOS 1Gx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered


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    VL33B2K69F-K0/K9/F8S 2Gx72 240-PIN VL33B2K69F 28-bit 240-pin PDF

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


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    L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1 PDF

    MT41K256M8DA

    Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


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    MT41J512M4 MT41J256M8 MT41J128M16 09005aef84bd8f53 MT41K256M8DA MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL47D5763D-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5763D is a 256Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of


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    VL47D5763D-K0/K9/F8S 256Mx64 204-PIN VL47D5763D 256Mx8 204-pin 204-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B2K60A-K9/F8S REV: 1.0 General Information 16GB 2Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B2K60A is a 2Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of thirty-six CMOS 1Gx4 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL


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    VL33B2K60A-K9/F8S 2Gx72 240-PIN VL33B2K60A 28-bit 240-pin 240-pin, erro45 PDF

    Untitled

    Abstract: No abstract text available
    Text: MicroConverter , 12-Bit ADCs and DACs with Embedded 62 kBytes Flash MCU ADuC831 FEATURES ANALOG I/O 8-Channel, 247 kSPS 12-Bit ADC DC Performance: ؎1 LSB INL AC Performance: 71 dB SNR DMA Controller for High Speed ADC-to-RAM Capture 2 12-Bit Monotonic Voltage Output DACs


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    12-Bit ADuC831 12-Bit 11-Bit MO-112-AC-1 56-Lead CP-56) MO-220-VLLD-2 C02986 PDF

    MICRON ddr3

    Abstract: A-225 DDR3 1gb dimm
    Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking


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    MT41J512M4 MT41J256M8 MT41J128M16 09005aef826aaadc MICRON ddr3 A-225 DDR3 1gb dimm PDF

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4 PDF

    M471B2874DZ1

    Abstract: ddr3 udqs K4B1G0846D
    Text: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb D-die 64-bit Non-ECC RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    204pin 64-bit K4B1G1646D 128Mbx8 256Mx64 K4B1G0846D M471B2874DZ1 ddr3 udqs PDF

    K4J10324KE-HC1A

    Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
    Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K4J10324KE 136FBGA 10tCK 10MAX K4J10324KE-HC1A K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Unbuffered DIMM DDR3 SDRAM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb D-die 64/72-bit Non-ECC/ECC 82FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    240pin 64/72-bit 82FBGA K4B1G0846D-HC 128Mbx8 256Mx64/x72 PDF

    tsop-ii 66 JEDEC TRAY

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY PDF

    P83C524

    Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
    Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES


    OCR Scan
    L1343 P83C524 P83C524 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP PDF