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    12N10 Search Results

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    RJMG1V812N101ER Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,1G V/T with LEDs Visit Amphenol Communications Solutions
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    12N10 Price and Stock

    Susumu Co Ltd RG2012N-101-W-T1

    RES SMD 100 OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-101-W-T1 Reel 17,000 1,000
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    Novacap LS1812N102K302NTM

    CAP CER 1000PF 250V C0G 1812
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    Flip Electronics S29GL512N10FAI010

    IC FLASH 512MBIT PARALLEL
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    DigiKey S29GL512N10FAI010 Tray 6,985 50
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    Susumu Co Ltd RG2012N-102-W-T1

    RES SMD 1K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-102-W-T1 Reel 6,500 1,000
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    Susumu Co Ltd RG2012N-101-D-T5

    RES SMD 100 OHM 0.5% 1/8W 0805
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    DigiKey RG2012N-101-D-T5 Cut Tape 4,990 1
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    12N10 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N-10M Inmet ATTENUATOR Scan PDF
    12N10W-00 Inmet ATTENUATOR Scan PDF
    12N10W-00F Inmet ATTENUATOR Scan PDF
    12N10W-01 Inmet ATTENUATOR Scan PDF
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    12N10W-02 Inmet ATTENUATOR Scan PDF
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    12N10 Datasheets Context Search

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    12N100A

    Abstract: 12n100 IXGH12N100 IXGH12N100A
    Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C


    Original     		PDF 12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A

    10N100

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		PDF 12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1

    1000 volt mosfet

    Abstract: SHD225613 SHD2258
    Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series


    Original     		PDF SHD225613 SHD2258 12N100 1000 volt mosfet SHD225613 SHD2258

    12n100q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C


    Original     		PDF 12N100Q 12N100Q O-247 O-268 100ms

    IXFH12N100Q

    Abstract: 10N100 6a diode 12N100Q IXFR12N100
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100

    12N10

    Abstract: Mosfet 12N10L 12N10L
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell


    Original     		PDF 12N10 12N10 O-220 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T O-251 12N10L-TN3-R 12N10G-TN3-R Mosfet 12N10L 12N10L

    13N100

    Abstract: 10N100 13n10
    Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		PDF 10N100 12N100 13N100 13N100 10N100 13n10

    shd2258

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series


    Original     		PDF SHD2258 SHD225613 12N100 SHD225613 O-254 O-254 shd2258

    12N100Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 12N100Q 12N100Q O-268 100ms

    12N100L

    Abstract: IXTH12N100L
    Text: Power MOSFETs for Linear Operation IXTH 12N100L VDSS = 1000 V = 12 A ID25 RDS on = 1.3 Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 12N100L O-247 O-247 728B1 123B1 065B1 12N100L IXTH12N100L

    IXGH12N100AU1

    Abstract: IXGH12N100U1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1

    10N100F

    Abstract: 10n100 98934
    Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V


    Original     		PDF 10N100 12N100 O-247 O-204

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


    OCR Scan     		PDF ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    D1488

    Abstract: D2523 12n100q mss1000 ld12a
    Text: EIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 R DS on = 1000 V = 12 A = 1.05 Q trr < 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C


    OCR Scan     		PDF 12N100Q O-247AD 00A/ns O-247 D1488 D2523 mss1000 ld12a

    12N100

    Abstract: No abstract text available
    Text: IGBT with Diode Low VCE sat High speed IXGA/12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C


    OCR Scan     		PDF IXGA/IXGP12N100U1 12N100AU1 O-220 O-263 12N100

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C


    OCR Scan     		PDF 12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1

    IXYS DS 145 12A

    Abstract: IXYS DS 145 LTS 543
    Text: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    OCR Scan     		PDF O-247 12N100Q 12N100Q to150 IXYS DS 145 12A IXYS DS 145 LTS 543

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol


    OCR Scan     		PDF 10N100 12N100