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    13N100 Price and Stock

    IXYS Corporation IXFH13N100

    MOSFET N-CH 1000V 12.5A TO247AD
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    Mouser Electronics IXFH13N100
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    IXYS Corporation IXFT13N100

    MOSFET N-CH 1000V 12.5A TO268
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    VISATON GmbH & Co KG WL-13-N---100-V

    SPEAKER 96DB RECTANGULAR
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    DigiKey WL-13-N---100-V Bulk 10
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    Glenair Inc 311SS013N1003-5

    ADAPTER - Bulk (Alt: 311SS013N1003-5)
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    Avnet Americas 311SS013N1003-5 Bulk 1
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    Glenair Inc 380FD013N1004A

    Connector Accessories Split Right Angle Rotatable Coupling-Split Shell EMI/RFI Non-Environmental Backshell with Strain Relief Olive Drab Cadmium Over Electroless Nickel Plated 10 Shell Size - Bulk (Alt: 380FD013N1004A)
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    13N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13N100

    Abstract: 10N100 13n10
    Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		PDF 10N100 12N100 13N100 13N100 10N100 13n10

    10N100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions


    Original     		PDF IXFT12 10N100 12N100 13N100

    10N100

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C


    Original     		PDF 10N100 12N100 728B1 123B1 728B1 065B1 10N100

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF O-247

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12n100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 10N100 12N100 13N100 13N100 O-247

    13N100

    Abstract: transistor ixfh application note 10N100 N100
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF O-247 13N100 transistor ixfh application note 10N100 N100

    13n10

    Abstract: 10N100 N100 13N100
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C


    Original     		PDF 10N100 12N100 O-247 O-204 728B1 123B1 13n10 10N100 N100 13N100

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    10N100

    Abstract: 13N100 N100 13n10
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions


    Original     		PDF IXFT12 10N100 13N100 N100 13n10

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100

    IXYS DS 145

    Abstract: 13N100
    Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii


    OCR Scan     		PDF IXFH/IXFM10N100 IXFH/IXFM12 IXFH13N100 10N100 12N100 13N100

    13n10

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS


    OCR Scan     		PDF IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50