IXGH12N100U1 Search Results

IXGH12N100U1 Price and Stock

Filter by Manufacturer


IXYS Corporation IXGH12N100U1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXGH12N100U1		8			1 $24.1848 10 $24.1848 100 $24.1848 1000 $24.1848 10000 $24.1848	Buy Now

IXGH12N100U1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH12N100U1		IXYS	1000V high voltage IGBT		Original	PDF

IXGH12N100U1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1	PDF
IXGH12N100AU1 Abstract: IXGH12N100U1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1	PDF
Untitled Abstract: No abstract text available Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« \| High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q	OCR Scan	IXGH12N100U1 12N100AU1 O-247	PDF
Untitled Abstract: No abstract text available Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C	OCR Scan	12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1	PDF
ixgr32n60cd1 Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 Text: Discrete IGBTs with FRED Diode U r u G series C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0 TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1	OCR Scan	O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60	PDF
IXGN40N60 Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V C<25 A VCE SAT) max V t typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES	OCR Scan	ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1	PDF
PH2001 Abstract: P12N100 Text: IGBT L0W VCES 1000 V! 24 A 1000 v! 24 A IXGA / IX G P 12N100 IXGA / IX G P 12N100A V CE S. t \| High speed IGBT ^C25 V CE(sat 3.5 V 4.0 V OC Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C 1000 V v CGR T,J = 2 5 °C to 150°C; FLGc =1 MQ	OCR Scan	12N100 12N100A O-220 O-263 PH2001 P12N100	PDF